Structures Of The Natural Passivation Layers On The Surfaces Of InSb Binary And VSnC Ternary Compounds

Compound material is a material widely used in human society,and its typical representatives include ceramic compounds and semiconductor compounds.The surface of these materials often undergoes structural evolution in the natural environment and forms a passivation layer.The application range of these passivation layers involves many fields of daily production and life,such as marine,chemical,semiconductor,automotive,ceramics and other industry.Academia and industry have found that characterizing the details of the structure evolution of the passivation layer of the above-mentioned material on the atomic scale is of great significance for revealing the structure-activity relationship of the passivation layer and the regulation of material corrosion resistance and thermal stability.Because binary and ternary compounds are the simplest compounds,this article takes VSn C ternary layered ceramics and indium antimonide(In Sb)nanowires as the research objects,using transmission electron microscopy to study at the atomic level Their surface passivation layer structure formed naturally in the air and its influence on material stability.The specific work is as follows:1.Taking the V₂Sn C structure ternary layered ceramic as the research object,with the help of the spherical aberration correction transmission electron microscope of the condenser,the crystal structure is determined and the structure and evolution of the natural passivation layer on the surface are characterized on the atomic level.The results show that V₂Sn C type ternary layered ceramics are different from most ternary layered ceramics.The crystal structure is cubic system,and the space group is R3 m(166).Its structure is metastable,and under the irradiation of electron beams the crystal is reconstructed into a face-centered cubic structure.In the natural environment,the surface spontaneously reconstructs to form a face-centered cubic structure passivation layer.2.Taking ?-? semiconductor InSb nanowires as the research object,using the spherical aberration correction transmission electron microscope of the condenser to characterize the surface oxide film of In Sb nanowires at the atomic level,it is determined the main components of the oxide film(indium oxide In₂O₃)and the atomic structure of the oxide film interface.In₂O₃exhibits island-like epitaxial growth along the(111)plane of the nanowire,and lamellar epitaxial growth along the(200)plane.Energy Dispersive Spectrometer(EDS)mapping revealed that the growth mechanism of the oxide film is indium out-diffusion growth.The geometric phase analysis(GPA)found microscopic strains caused by misfit dislocations between the interfaces.It provides essential guidance for adjusting the orderly passivation of InSb nanowires.