Font Size: a A A

Preparation Of Ga2O3 Thin Films By Magnetron Sputtering And Its Optoelectronic Properties

Posted on:2022-12-14Degree:MasterType:Thesis
Country:ChinaCandidate:M LiFull Text:PDF
GTID:2481306743974599Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
With the large-scale integration and miniaturization of electronic components,the shortcomings of traditional semiconductor materials are gradually exposed.Therefore,researchers are looking for some new semiconductor materials that can replace traditional materials in nature.Due to the limitation of the bandgap of traditional semiconductors,the performance in some aspects is very insufficient,and some ultrawide bandgap materials have begun to attract people's attention.Among the fourthgeneration semiconductor materials,gallium oxide has significant advantages in breakdown electric field,light transmittance,and electron mobility,so it is widely used in some high-power,high-frequency and optoelectronic devices.The study of gallium oxide materials can be divided into gallium oxide nanomaterials,gallium oxide single crystals,and gallium oxide thin films.This paper mainly studies gallium oxide thin films.First of all,this paper explores the oxygen flow ratio,one of the influencing factors of high-temperature growth of gallium oxide films and prepares gallium oxide films with better performance by changing the oxygen flow ratio.The films prepared under the flow rate of 1% oxygen have the best crystal quality,the film surface is smooth and uniform,and has good permeability and UV sensitivity.In addition,a luminescence peak in the ultraviolet to the green region was found in the photoluminescence test,which may be formed by the recombination energy levels generated by different defects in the film.The exploration of thin film growth conditions provides the necessary conditions for the preparation of high crystalline quality gallium oxide and provides new ideas for future research.Secondly,we have grown gallium oxide thin films on sapphire substrates by magnetron sputtering at room temperature.To improve the crystal quality of the amorphous gallium oxide,the film was subjected to high-temperature thermal annealing,and the gallium oxide would undergo lattice reorganization during the annealing process.The phenomenon,which reduces its internal defects.In this paper,the optimal conditions for the annealing of gallium oxide thin films were explored,and the law of property changes was explored by controlling the annealing temperature of gallium oxide thin films.The structural components and optical properties of the films were characterized and analyzed,it is obvious that the increase of the annealing temperature of the gallium oxide thin film can improve the crystalline quality of the thin film,which may be due to the oxidation of the amorphous state during the longterm high temperature process.The gallium thin film exhibits crystalline properties after high temperature recrystallization,and the surface morphology of the thin film is also improved.However,when the annealing temperature continues to increase,under the action of high temperature stress,the complete lattice is destroyed,the film is in an amorphous state,and large particles can be observed on the surface,and the roughness of the film becomes larger.Finally,a Pt electrode was deposited on the film to explore the optoelectronic properties of the prepared MSM solar-blind detector.Among them,due to the few internal defects of the film annealed at 900 °C,the prepared detector has great advantages in performance.The light-dark current ratio of the device can reach 2184,and the performance of the device is more prominent in response time,which has reached within 0.05 s,which is better than the reported similar gallium oxide devices.The excellent performance of the prepared UV detector in response speed provides the possibility for the application of gallium oxide devices in the field of high precision.
Keywords/Search Tags:Gallium oxide thin film, Magnetron sputtering, Annealing, Solar-blind photodetector, RF magnetron sputtering, ?-Ga2O3
PDF Full Text Request
Related items