| As a new type of non-volatile memory,phase change memory has many significant advantages such as high memory density,fast operation speed,long data retention time,good radiation resistance,etc.It is considered to be the most likely to replace Flash as next generation memory.In the process of practical use,the biggest problem is that the programming current is too large,resulting in a large power consumption.Therefore,it is particularly important to reduce the programming current of the unit.For a given technology node,the strategy for reducing the programming current of PCM falls into two complementary categories:materials engineering and thermal engineering.From the point of interface thermal engineering,this paper places a single layerMo S2 between the bottom electrode and the functional layer,restricts the flow of heat from the functional layer to the bottom electrode,and improves the utilization efficiency of the heat generated by the unit,to improve unit performance.In this paper,a phase change memory cell with a single layerMo S2 is prepared,which is placed between the bottom electrode（Pt）and the functional layer（Ge2Sb2Te5）.The preparation of the cell is based on the traditional T-type phase change memory cell fabrication process,mainly using lithography,sputtering,stripping and other techniques.By means of these methods,we have prepared a phase change memory cell with single layer Mo S2,with a feature size of 5μm.Compared with the traditional phase change memory without Mo S2,the threshold voltage is reduced from 3.26V to 1.37V,which is reduced by 58%;the RESET voltage is reduced from 2.0V to 1.3V,which is reduced by 35%.The power consumption of the unit is significantly reduced,demonstrating the role of Mo S2 in interface thermal engineering.After adding a layer of Mo S2,the operating voltage of the device is significantly reduced.We speculate two possible reasons:First,Mo S2 acts as an interface thermal resistance,limiting the flow of heat to the bottom electrode;second,the resistance introduced by Mo S2 generates heat,and heat phase change material.To rule out the second possible reason,we moved the position of Mo S2 in the cell,which is placed between Ge2Sb2Te5（GST）,away from the bottom electrode,so that Mo S2 will no longer limit the flow of heat to the bottom electrode,only as a series resistor.We studied this possible impact and performed ANSYS thermal simulation. |
