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Study On Modification Of Silicon Organic Solar Cells Using Anion Controlled Different Micro-nano Structured Tungsten Oxide

Posted on:2022-04-22Degree:MasterType:Thesis
Country:ChinaCandidate:Z T NiFull Text:PDF
GTID:2491306332972899Subject:Electric Power Industry
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Hole transport layer materials and their film formation abilities directly influence the performance of the solar cell devices where they are employed.Therefore,current research has focused primarily on the optimization of hole transport materials,while facing certain challenges.PEDOT:PSS,an organic material,is widely used as a hole transport layer material in Si-based solar cell devices because it is compatible with the energy band of Si and has the advantages of low cost,easy preparation,high electrical conductivity and high permeability.To curb the defects in PEDOT:PSS and improve its conductivity,researchers have optimized PEDOT:PSS materials by doping with nanoparticles.Consequently,an enhancement in their electrical conductivity was noted,thus establishing doping as one of the most efficient methods to overcome the shortcomings of PEDOT:PSS.This study deals with the modification of PEDOT:PSS via doping with three different morphologies of tungsten oxide,and explores the effects of the different tungsten oxide morphologies on device performance.In addition,P,Se,and P/Se composites were fabricated using the tungsten oxide found to have the optimum morphology.The introduction of P,Se,P/Se elements improved the conductivity of tungsten oxide materials and improved device performance.(1)Three types of tungsten oxides with different morphologies were synthesized via a hydrothermal method and their phases were characterized.Instead of depositing tungsten oxide films by the high-vapor thermal deposition method,we doped different concentrations of tungsten oxide micro-nano materials with various morphologies into PEDOT:PSS.This aided in the elucidation of the optimal morphology and doping concentration of the tungsten oxide micro-nano material corresponding to the most efficient device performance.(2)P,Se,and P/Se were successfully deposited on the tungsten oxide micro-nano materials by chemical vapor deposition.Furthermore,P,Se,and W5+were added to the tungsten oxide nanoparticles.Following this,we doped PEDOT:PSS with the adjusted WOx nanoparticles and used a time-saving one-step coating method to prepare the PEDOT:PSS-WOx hole transport layer film.High-efficiency Si/PEDOT:PSS HSCs were realized.Employing the P,Se,or P/Se-WOx mixed PEDOT:PSS film as a hole injection layer significantly improves the PCE of Si/PEDOT:PSS HSCs,from 10.24%to 13.64%.Moreover,it was observed that,,andwere greatly improved.Compared with the PCE of the PEDOT:PSS film,Si/PEDOT:PSS solar cells prepared with the PEDOT:PSS-WOx films exhibit superior photovoltaic performance,which is attributed to the metallization properties of W5+.Moreover,the surface of the P/Se-WOx-doped PEDOT:PSS film is smoother and flatter,indicating the superior quality of the film.It is evident from these results that WOx has significant potential to improve the performance of Si/PEDOT:PSS HSCs.
Keywords/Search Tags:Photovoltaic device, n-Si, PEDOT:PSS, Phosphorization, Selenation
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