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Electron Beam Irradiation Modification Of Indium/Bismuth Based Semiconductor And Its Photocatalytic REDOX Mechanism

Posted on:2022-04-12Degree:MasterType:Thesis
Country:ChinaCandidate:J WangFull Text:PDF
GTID:2491306338993129Subject:Chemical Engineering and Technology
Abstract/Summary:PDF Full Text Request
With the increasing public awareness of environmental protection and the concern for clean energy,semiconductor materials are increasingly widely used in the field of environmental governance.Among them,In/Bi semiconductors have been extensively studied because of their excellent physical and chemical properties.Nevertheless,In/Bi semiconductors still have high photo-generated carrier recombination rate and serious photo-corrosion.In this paper,the In/Bi based semiconductor materials were modified by electron beam irradiation,and the photocatalytic oxidation-reduction properties of the modified materials were studied.The specific contents are as follows:(1)The photocatalytic oxidation performance of In2S3-CdIn2S4@X(X=Ag/Ag3PO4/AgI)ternary heterostructure nanotubes was modified by electron beam irradiation was explored.And under visible light,In2S3-CdIn2S4@X(X=Ag/Ag3PO4/AgI)was applied to the degradation of carmine and Cr6+.The results showed that In2S3-CdIn2S4,In2S3-CdIn2S4@AgI before EBI and In2S3-CdIn2S4@AgI after electron beam irradiation can completely remove carmine and Cr6+in 80,20 and 5 min,respectively.Photoluminescence(PL)spectrum results show that electron beam irradiation can significantly reduce the electron-hole recombination rate in In2S3-CdIn2S4@AgI.The electrochemical impedance spectroscopy(EIS)results further confirm that In2S3-CdIn2S4@AgI irradiated by electron beam has a high efficiency of electron-hole separation.These results indicate that electron beam irradiation can enhance the photocatalytic activity of In2S3-CdIn2S4@AgI ternary heterostructure nanotubes.Electron paramagnetic resonance(EPR)experiments have further confirmed that the main active groups in In2S3-CdIn2S4@AgI photocatalytic system are ·O2-and h+.(2)The photocatalytic performance of Bi6O7FC13 nanotubes modified by electron beam irradiation was explored.First,Bi6O7FC13 nanotubes were synthesized by hydrothermal reaction,and the reverse growth of Bi quantum dots at the interface of Bi@Bi6O7FC13-X(X=20/60/90)nanotubes was realized by the controllable adjustment of electron beam irradiation.Subsequently,Bi@Bi6O7FC13-X(X=20/60/90)was applied to the photocatalytic reduction of CO2.The results showed that after 4 h of photocatalytic reduction,the rate of CO formation by Bi@Bi6O7FC13-90 was 15.79 μmol·g-1·h-1,which is 6.29 times that of Bi6O7FCl3.The PL results showed that the PL peaks of Bi@Bi6O7FC13-90 were the lowest after electron beam irradiation,indicating that the Bi quantum dots reduced by electron beam irradiation inhibited the recombination of electron-hole pairs in Bi6O7FC13 nanotubes.The synergistic effect of the dots makes the electrons and holes separate quickly,thereby increasing the lifespan of the photogenerated electrons.The EPR experiment confirmed that the h+,·O2-and ·OH generated on the surface of the photocatalyst after light excitation improved the efficiency of photocatalytic reduction of CO2.(3)To investigate the photocatalytic performance of lamellar Bi2WO6 microspheres modified by electron beam irradiation.Bix@Bi2-x WOn with oxygen defect was obtained by electron beam irradiation of Bi-O bond in Bi2WO6 as a template.The obtained photocatalyst was applied to the photocatalytic degradation of oxytetracycline.The results showed that Bi2WO6 could achieve equilibrium degradation of oxytetracycline within 50 min,and Bi0.32@Bi1.68WO5.80 could completely remove oxytetracycline in water within 20 min.XPS results show that compared with Bi2WO6,the positive polarizability of Bi and W in Bi0.32@Bi1.68WO5.80 increases,while the negative polarizability of O increases,which proves the existence of Bi0 and oxygen defects.The DFT results further confirmed that the electron cloud density at the oxygen defect site increased,which promoted the photocatalytic reaction.The results of EPR experiments show that the lattice oxygen defects generated by electron beam irradiation can enhance the generation of ·OH radicals,which can activate SO42-to generate ·SO4-radicals.
Keywords/Search Tags:In/Bi-based semiconductor, electron beam irradiation, interface modification, water pollutants, photocatalysis
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