Study On The Influence Of Gate Driving Parameters On The Performance Of IGBT For DC Circuit Breaker

The Global demand of electricity is steadily increasing,and traditional resources of electric power generation are running out.The need to integrate new sources of energy called renewable(offshore wind farms and photovoltaic generation in deserts...)in the existing grid has raised interest in HVDC(High Voltage Direct Current)technology,especially the high voltage direct current multi-terminal(MTDC).HVDC technology has developed rapidly,creating a parallel evolution of the technology of DCCBs(Direct Current Circuit Breakers);which makes hybrid circuit breakers appear.In this new technological trend of hybrid circuit breakers,IGBTs are core device.Their switching characteristics has an important impact on the circuit breaker performance.Generally,the challenge remains to find the best compromise for driving parameters to insure a good current shut-down;meaning limiting as much as possible the voltage overshoot caused by the stray inductance,having the best turn-off time and less turn-off losses during the fault current shut down process.An in-depth study of the influences of the control parameters on the IGBT,could promote the development of high voltage DC circuit breakers and improve the flexibility of DC System stability.This research conducted a comprehensive study of the influence of the gate driving parameters such as gate resistor RG,the external capacitor connected between the gate and emitter CGE,and the turn-off gate voltage VGE on an IGBT switching behavior in diode full-bridge submodule(FBSM)DCCB topology context.After a theoretical consideration of the test platform,we have verified the operating with simulation and then end up by building an experimental platform to reflect the conditions of the semiconductor devices in the FBSM,based on experimental laboratory activities,we pointed out very carefully in accordance with the individual application parameters the values to choose for this parameters for good performances of IGBTs in DCCB.Finally we have given some limits of this study and provide approaches and hints for further study in this research area.