Research On Hafnium Oxide-Based Low-Power Memristor In The Automotive Field

The automobile electronic system is a part of the entire automobile system,and it is also one of the key components that affect the advancement and fashion of the automobile However,the components and circuits that make up the automotive electronic system are numerous and complex,and the national standards and corporate standards are sometimes not completely consistent,and the requirements for scientific researchers and product developers are also very demanding.The development cycle of automotive electronic products is accelerating,and technical personnel engaged in the automotive electronics industry should continue to deepen and accelerate the process of commercialization for certain types of products.This thesis conducts in-depth research on memory in automotive electronic systems from three aspects:storage device preparation,device performance optimization,and circuit design.The main research contents are as follows:First of all,this thesis gives a brief overview of non-volatile memory(NVM)in automotive electronic systems,briefly introduces several types of non-volatile memory commonly used in the market and automotive systems,and analyzes their respective advantages and disadvantages,to highlight and emphasize the advantages of resistive random access memory(RRAM).As a new generation of NVM with application prospects,resistive random access memory has attracted the attention of academia and industry due to its simple structure,fast erasing and writing speed,low energy consumption compared with other types of memory,reduced size and easy integration.Secondly,this thesis demonstrated a Ti/(TiOx/HfOx)n/Pt high-density integrated resistive random access memory by optimizing the structure.At the same time,the magnetron sputtering nitrogen annealing treatment is used to study its influence on the electrical properties of the device.Thirdly,the effect of low-dielectric constant materials on the interface regulation of resistive random access memory is deeply explored.By inserting a low-dielectric constant material between the hafnium oxide switching layer and the bottom electrode,the effect on the resistance switching performance of the device was explored,and the operating mechanism of the device was verified by Comsol multiphysics software.This thesis systematically studied the performance of four types of hafnium oxide-based low-energy devices such as Ti/n(AlOx/HfOx)/Pt.The method of linear fitting and mechanism model is used to analyze and verify the switching mechanism of the devices.Finally,this thesis further researched the potential applications of low-energy resistive random access memory in the future automotive memory.By adopting a reverse design method and combining the knowledge of memristor test circuits and integrated circuits,this thesis designs a system framework diagram that can be used for accident detection functions,which will significantly promote the development of automotive storage in the direction of low power consumption,miniaturization,and rapid response.