Research On 3D Stacked Fabrication Technology Of RF MEMS Switch Based On TSV

RF MEMS switch is an important application of MEMS technology,a key device to realize control of microwave signal transmission,and a basic component of RF MEMS devices such as tunable filters,multi-phase shifters,multi-position delayers,etc.MEMS switches have small size.,Low power consumption and high isolation.With the development of communication technology,traditional MEMS switches have been unable to meet the requirements for multi-channel signal control and intercommunication.The three-dimensional stacked MEMS switches based on through silicon vias can integrate multiple MEMS switches in the vertical direction,which can effectively improve the switch to multiple The control ability of the channel realizes the intercommunication of multiple signals,reduces the transmission distance of the signal,and improves the reliability of the device.In this paper,by combining MEMS switch with through silicon via（TSV）process,research on TSV,sacrificial layer and multi-layer bonding process is carried out,and a three-dimensional stacked MEMS switch based on through silicon via is designed and fabricated.The paper first summarizes the research status of MEMS switches and stacked devices at home and abroad.Based on the theory of MEMS switches,the basic structures of switches such as CPW,power divider,contacts,anchor points,etc.are designed and optimized.After analysis and integration,a three-dimensional stacked MEMS switch design model based on through-silicon vias is obtained.Then,the paper studies the process of the three-dimensional stacked MEMS switch based on through-silicon vias,introduces the layout drawing,process design and detailed parameters,and focuses on key processes such as TSV,sacrificial layer and multi-layer bonding..Breaking through key processes such as double-sided blind hole electroplating to prepare TSV,high flatness sacrificial layer technology and gold-tin bonding,a double-layer MEMS switch based on TSV technology was prepared.In the end,the test method of the three-dimensional stacked MEMS switch based on through-silicon vias is designed,and the electrical and mechanical properties of the three-dimensional stacked MEMS switch are tested by using the relevant test equipment.