Design Of Silicon-based Waveguide Bragg Grating Photonic Devices

Waveguide Bragg grating is a kind of photonic device which plays an important role in optical communication.It can reflect incident wave by phase matching between transmission modes.Compared with the traditional Fiber Bragg Grating(FBG),the waveguide grating based on Sion-on-Insulator(SOI)has the advantages of being compatible with CMOS process,easy to realize photon integration,and capable of mass production.The research contents and objectives of the National Natural Science Foundation of China and Tianjin Key Research and Development Program are discussed in this thesis.Taking the based on silicon waveguide Bragg grating device whose reflection wavelength is 1550 nm optical communication band as the research object,the modeling and simulation,parameter optimization,layout drawing,flow test and other research contents are carried out.The results show that the temperature sensor based on silicon waveguide Bragg grating shows excellent sensing performance,and the relevant research results provide a certain theoretical basis,technical development means and effective application way for the design,development and technology development of the new sensor.The main research work and important achievements of this thesis are as follows:(1)Three kinds of based on silicon waveguide Bragg grating devices with different structures(bilateral,unilateral and top surface)are proposed and developed to realize temperature sensing measurement.The effects of the grating duty cycle,period number,etching depth and modulation depth on the grating reflection spectrum were studied,and the results of their effects on the sensing performance were compared to obtain the best device structure.The design results show that the sensitivity of the temperature sensor with the best top surface structure is 76pm/?,the sensitivity of the temperature sensor with the best unilateral structure is 87pm/?,and the sensitivity of the temperature sensor with the best bilateral structure is92pm/?.(2)Based on Belgium ISIPP50 G semiconductor process,a two-sided silicon-based waveguide Bragg grating device with a period of 310 nm,a period of1000,a grating length of 310?m,a duty cycle of 0.5,a 220 nm fully etched process,and a modulation depth of 25 nm were designed and plotted.Two-sided silicon-based waveguide Bragg grating photonic integrated device with the size of 310?m×510nm×220nm was obtained after the wafer flow.(3)Experimental results show that the sensitivity is 80pm/?,the temperature measurement range is 5?160?,the temperature measurement error is ±0.1?,the maximum reflectivity is 0.998,and the wavelength range is 1535nm?1547nm.The temperature sensing function of silicon waveguide Bragg grating with high sensitivity is realized.