Health Monitoring And Aging Research Of IGBT Based On Thermal Sensitive Electrical Parameters

As the core of power electronic technology,power semiconductor device will revitalize the pattern of China’s energy industry in the major application scenarios of emerging industry,such as UHV DC transmission,high-speed railway,electric vehicles,renewable energy power generation and 5G communication.However,with the increase of power level,power density and dynamic response speed of power electronic devices,the reliability of power semiconductor devices seriously restricts the safe and reliable operation of power electronic device systems.Therefore,quickly and accurately extracting the status information of power semiconductor devices is essential to improve their health monitoring level and the reliability of power electronic device systems.Throughout recent years research of extracting junction temperature information and aging information of power semiconductor devices based on electrical parameters.The following problems need to be solved.Firstly,the problem is effective implantation of electrical parameters which are under actual operating conditions.Secondly,the problem is coupling relationship between the turn-on voltage drop(V_ce（on）),junction temperature and aging.Based on the above background,this article proposes corresponding solutions.Firstly,the gate drive peak voltage(V_G-peak)and the turn-on voltage drop(V_ce（on）)is easy to implant online,and integrate design the corresponding measurement circuit with the drive circuit.Secondly,introduce the method of decoupling the V_G-peak to analyze the coupling relationship between the V_ce（on）,junction temperature and aging,and carry out multiple ASEPs to comprehensively evaluate the health status of the Insulated Gate Bipolar Transistor（IGBT）.In order to extract the junction temperature information of IGBT.By analyzing the measuring junction temperature principle and influencing factors of the V_G-peak and the V_ce（on）separately,optimize the design of the measuring circuit according to the influencing factors.Through the integrate design of the drive circuit and the measurement circuit,a non-invasive implantation method of online extraction of the junction temperature by TSEP is realized.In order to calibrate the measurement circuit,a thermocouple was used to extract the junction temperature of the discrete IGBT.Also,at the corresponding junction temperature,the designed measurement circuits were used to extract the V_ce（on）at low current(V_ce（LOW）)and the V_ce（on）at high current（Vce（HIGH））and the VG-peak.In order to extract the aging information of IGBT.This paper has built a power cycle accelerated aging test platform that uses the discrete IGBTs as the research object and the aging mode of constant current and constant switching time.During the aging process of the discrete IGBTs,the V_G-peak,the V_ce（LOW）and the V_ce（HIGH）were extracted in offline.By comparing the changes of the three ASEPs before and after aging,the aging rule of the tested IGBT is analyzed.The research results show that the trend of the V_ce（LOW）and the V_G-peak is not obvious,and the V_ce（HIGH）is a relatively sensitive ASEP that changed obviously.In this paper,the V_G-peak is combined with the V_ce（HIGH）to achieve decoupling analysis of junction temperature and aging.The test results demonstrate the feasibility of the decoupling analysis method,and construct multiple ASEPs to comprehensively evaluate the health status of the tested IGBT.