| The fifth generation of mobile communication technology(5G)has been gradually applied to various countries and various technical fields,It has greatly optimized our work and lifestyle and brought unlimited possibilities to society.At the technical level,the implementation of 5G technology places stringent requirements on the current wireless communication system,It mainly reflected in the following two aspects:First,in order to meet the requirements for fast,accurate and distortion-free transmission of massive data,existing wireless transceivers must work in terms of bandwidth Expansion.Secondly,in order to be compatible with the existing equipment in the second to fourth generation communication systems,the new generation of wireless transceivers must also have the technical characteristics of stable and efficient operation in multiple frequency bands.It is well known that the design of power modules has a huge impact on the performances of wireless transceivers,especially in terms of gain,efficiency,and power consumption.Therefore,designing broadband and multi-band power amplifier devices with high efficiency indicators has high academic significance and engineering value.The main work of this thesis is divided into the following three points:1.It simply summarizes the specific work of existing broadband high-efficiency power amplifiers and dual-band high-efficiency power amplifiers at home and abroad,The source of the literature is mainly some classic power amplifier design cases and high-quality articles recently published in excellent journals.Through this process,the significance of the topic of using GaN materials for power amplifier design is proven,and at the same time,based on the previous work,we further propose our own design methods.2.This thesis has completed the design of an ultra-wideband class AB power amplifier,The output matching circuit uses the basic idea of harmonic control,During the design process,the circuit is divided into three parts and the impedance conversion is gradually performed.At the same time,a dual-line structure is introduced into the second harmonic tuning module to achieve better control of the second harmonic impedance at three frequency points in the frequency band,The final amplifier design can maintain high efficiency and good gain across the octave frequency range.Circuit design based on GaN CGH40010F transistor in the frequency range of 0.2-1.5 GHz(relative bandwidth 152%),Under the condition of single-tone signal test,the gain is higher than 10 dB in the target frequency range,and the drain efficiency is 56%-65%,the output Power is above 38 dBm.3.Based on the traditional T-shaped dual-frequency impedance converter,this thesis improves and designs a flexible multi-node dual-frequency impedance conversion network,The theoretical analysis proves that the structure has wider applicability and has a certain degree of second harmonic impedance tuning function.Based on this structure,a dual-band high-efficiency power amplifier is designed,The simulation results show that the gain is higher than 10 dB at 2.3 GHz and 3.5 GHz and the drain efficiency is 70.9%and 68.2%.The drain efficiency is higher than 60%in the 2.21-2.37 GHz and 3.33-3.63 GHz bands. |
