Characterization Of Low Temperature And Irradiation Effects Of Capacitive MEMS Accelerometers

In this paper,the capacitive MEMS accelerometer is taken as the research object,through low temperature environment and different irradiation sources,the low temperature and irradiation effect of capacitive MEMS accelerometer are studied,and the low temperature effect,ionization effect,displacement effect and electrical performance degradation law of capacitive MEMS accelerometer are revealed,low temperature,irradiation damage quantitative model is established.The low temperature test(25-300K)shows that the low temperature has a weak influence on the mechanical structure of the head of the capacitive MEMS accelerometer,and the capacitance between the plates is less affected by the temperature,but the low temperature will cause the resistance change between the plates.Comsol software simulation shows that low temperature will cause the drift of characteristic frequency of the sensor,resulting in output error of capacitive MEMS acceleration sensor.Electronic irradiation has a greater influence on the interplate resistance characteristics of capacitive MEMS accelerometer than the interplate capacitance characteristics,which is the main mechanism of ionizing radiation damage.At the same time,electronic irradiation will lead to the increase of output voltage of accelerometer.Low injection electron irradiation has little effect on the voltage characteristics of ASIC circuit,while high injection electron irradiation will degrade the voltage at the same end and opposite end of differential output.With the increase of proton irradiation energy,the capacitance between the plate of the capacitive MEMS accelerometer showed negative correlation trend,plate between resistance is strongly influenced by low-energy proton radiation,and form a complete set of PCB after sensitive/not sensitive to the direction of output voltage output increases slightly,caused the capacitive MEMS accelerometer electrical performance degradation.At low doses of Co-60?,the ASIC circuit worked well,but at high doses of Co-60?,the electrical parameter deviation phenomenon appeared.