IGBT Accelerated Aging Experiment Platform Development

IGBT is the core device of the power electronic device,and its reliability determines the safe and reliable operation of the power electronics.At present,the research process of accelerating the reliability of IGBT reliability with accelerated aging experiments,and the IGBT failure mechanism is studied for a short time.However,the current IGBT accelerated aging experiment platform is expensive,aging strategy is single and can only simultaneously aging a single IGBT module,with low efficiency.Therefore,this article is designed to design a low-cost IGBT accelerated aging experiment platform with multiple aging strategies to accommodate multiple IGBT modules.First of all,based on the analysis of the failure mechanism and failure modes of IGBT,this paper clarifies the measurement characteristic parameters of the IGBT during the aging process:saturation voltage drop and thermal resistance.Based on this,the main circuit and the overall architecture of the power cycle aging experiment platform designed in this paper is proposed.Secondly,from the perspective that the experimental platform needs to meet the requirements of simultaneous aging of multiple modules and multiple aging strategies,the actual application requirements of the aging unit are analyzed,and the software and hardware of the IGBT accelerated aging experimental platform are designed and implemented.The hardware system mainly includes a driving circuit for aging multiple IGBT modules at the same time,a junction temperature measurement circuit that provides parameters for the control strategy of constant junction temperature fluctuations,a case temperature measurement circuit that provides parameters for the control strategy of constant case temperature fluctuations,and a water-cooled circulation system includes its control circuit for rapid heat dissipation.The software system is divided into master computer software and slave computer software.The master computer software is developed using Qt combined with VISA,which mainly realizes the functions of instrument control,data reception,and implementation of aging strategics.At the same time,it can analyze and save the IGBT electrical parameters at different temperatures.The slave computer software adopts ARM microcontroller to realize the control of the drive circuit and the water-cooling circulation system,as well as the collection and upload of the shell/junction temperature data,and the control of the water-cooling cycle system.Finally,the IGBT accelerated aging experiment platform was built,and the 1200V/150A IGBT module was used to verify the repeatability and function of the experiment platform.The results show that the experimental platform designed in this paper takes no more than 40 seconds for a single power cycle experiment.It can not only perform aging experiments on 4 IGBT modules of the same current level,but also execute the control strategy of constant junction temperature fluctuation and constant case temperature fluctuation at the same time.By analyzing the collected IGBT aging experimental data,it is found that the absolute value of the temperature coefficient and the steady-state thermal resistance value obtained by the saturation voltage drop fitting have a gradually increasing trend as the IGBT module’s aging degree deepens.