The Fabrication Of Bio-resistive Memory And Its Logic Circuit Research

Resistive random access memory can integrate data storage and logic operation,which can not only reduce the frequent data exchange between data and memory,but also enhance the operation rate of traditional logic gates,which is considered to be a promising solution to the von Neumann bottleneck.one of the candidate devices.Natural biomaterials are biocompatible and degradable,and have great advantages in the fabrication of green bio-resistance memory.In this paper,silkworm hemolymph(SH)and egg albumen(EA)were used as the host materials of the resistive memory medium layer,and four kinds of bio-resistive memory were prepared by spin coating and vacuum evaporation methods.The fabrication method of the device,the characterization of the dielectric layer material,the electrical properties and its resistance-switching mechanism were studied.The ON/OFF current ratio of the device based on SH and graphene oxide can be tuned(1?10~3),but the upper limit of the ON/OFF current ratio of the device tuning is small,which will cause errors in the theoretical calculation results of the logic circuit.Therefore,gold nanoparticles and PMMA are used to improve the ON/OFF current ratio(1.56×10~5)and threshold voltage stability of the device,and the logic NOT gate is realized by using the above two devices.Due to the structural limitation of the sandwich structure,the device was improved to a cross-bar structure in order to realize more logic functions.(10~5)and stable threshold voltage,more logic functions can also be realized,and the logic functions of AND,OR,NOT,NAND and NOR can be realized by using this device.