A High-performance Tunneling Field Effect Transistor Based On A High Schottky Barrier

With the fast growth and development of science and technology,the electronic equipment involved in our daily life is becoming more and more sophisticated and exquisite with the trend of the times,and the scientific and technological items make us find everything new and fresh,which means that semiconductors have entered the all-round life.However,with the reduction of the volume of many electronic products,the size,volume and power consumption of traditional transistors are no longer suitable for installation in modern electronic products.In order to make the transistor follow the development of information technology and solve a series of problems such as the increase of subthreshold swing and short channel effect caused by the reduction of transistor size,a high performance tunneling field effect transistor structure based on high Schottky barrier is proposed.Traditional MOS transistors generate large current by lowering Schottky barrier.However,the device proposed in this paper is a structure that combines TFET conduction mechanism with SB MOSFET structure characteristics.Contrary to the traditional transistor,the new structure increases Schottky barrier and blocks reverse leakage current by adding auxiliary gate in the center of the device,but increases the height of electronic barrier as much as possible in the conduction mechanism to reduce the emission of hot carriers.At the same time,the contact space between source and drain and bulk silicon is increased in structural design.In order to avoid short channel effect,the vertical channel height of the device is also increased,which not only increases the effective channel length of the device,but also increases the area of tunneling effect of the device and improves the forward conduction current.The central auxiliary gate of the device is for better control of the channel,so as to better suppress the reverse leakage current.Compared with the traditional tunneling field effect transistor,the new tunneling field effect transistor can achieve lower subthreshold swing,higher on-current and larger switching ratio.Moreover,the new device with unidirectional conductivity,which is different from the traditional transistor,can realize the exchange of conductivity types because of its symmetrical structure.During the experiment,the subject was studied by Silvaco TCAD simulation software.The main function of Devedit 3D is to edit and draw devices and display them in a three-dimensional way for better observation.The electrical characteristics of the device are simulated by Altas statement in Deckbuild.The result is finally analyzed in Tonyplot 2D.In addition,it is necessary to further study the potential and electron/hole concentration of the device in Tonyplot 3D.A more accurate analysis of the parameter optimization of each part of the structure is made to make the device achieve its best characteristics.