Research On Key Technology Of High Power T/R Components Based On SiP

Phased array radar is the key equipment of modern high-tech information warfare,and T/R module is the core component of phased array radar,which has a decisive influence on the performance index of the whole radar system.With the development of modern radar systems,higher requirements are put forward for T/R module,which develop toward high power,miniaturization,integration and high reliability.The integration of multiple devices in one package through system level packaging（Si P）technology makes T/R module more miniaturized and integrated.The main studies completed in this thesis based on Si P technology are.Designed an 8-channel P-band T/R module,which uses two HTCC substrates spliced together,each with four transceiver channels,with dimensions of 145 mm × 75mm× 3mm,sintered from 13 layers of HTCC raw ceramic tiles.The transmit channel uses a two-stage amplifier cascade with a transmit power of 30W（pulse wave 300 W,10% duty cycle）.In order to make the chip work stably at high power output,a new microfluidic heat dissipation structure is proposed,and the simulation results show that the overall thermal dissipation is 80 W,and the overall maximum temperature of the substrate does not exceed 60℃ and the maximum temperature of the chip does not exceed 70℃ when the microfluidic water flow rate is 20ml/s.In order to effectively protect the receiving branch,a multi-stage absorption limiter is designed,which operates in the frequency band of 220MHz～260MHz.Simulation results show that the voltage VSWR is less than 1.2and can withstand 300 W of pulse power.The test results of the 8-channel T/R module show that the temperature of the component can be stabilized below 70℃ at 80 W thermal dissipation,and the receive gain is 25.5d B,the noise factor is less than 4d B,and the VSWR is less than 1.5 in the operating band of 220MHz～260MHz.The saturation output power of the test drive amplifier is not less than 40 d Bm,the in-band gain is about 35 d B,and the return loss is better than 11 d B.In order to reduce the substrate area and increase the yield rate in the production process,a single-channel high-power T/R module is designed.In order to make the assembly more miniaturized and integrated,the transceiver switch is replaced with an RF switch and a bandpass filter is added to the receiving branch.The alumina ceramic substrate was changed to an aluminum nitride ceramic substrate with higher thermal conductivity,and a heat sink was added to use natural heat dissipation.Simulation shows that the maximum chip temperature is stable below 70℃,which can ensure the normal operation of the system.