Study On Growth Mode Of BiVO₄ Films Prepared By Magnetron Sputtering

With the continuous development of human society,people’s demand for energy is increasing day by day.The reserves of energy on earth are limited and will be exhausted in the next tens to hundreds of years.The use of traditional energy sources（petroleum,coal,natural gas）will cause serious harm to the environment,producing substances such as sulfur monoxide,sulfur dioxide,carbon monoxide and carbon dioxide,which directly or indirectly affect the environment,resulting in acid rain,greenhouse effect and haze and other phenomena.In view of this,the development of environmentally friendly,clean,safe and sustainable energy technologies is one of the most difficult challenges facing researchers today.There are many solutions to the energy crisis and environmental pollution.Among them,semiconductor photocatalysis technology plays an important role in the energy crisis and environmental pollution.All have better results.Bismuth vanadate（Bi VO₄）is one of the most promising materials for visible-light splitting water for oxygen generation.Since the discovery of Bi VO₄ materials,there are still many fundamental problems that have not been solved.Compared with powder and polycrystalline samples,epitaxial thin films guided by substrates can effectively control the morphology,structure,defects and exposed crystal planes of the samples,which is conducive to the study of fundamental problems.The single-crystal Bi VO₄ epitaxial thin film prepared by the previous preparation method is in an island-like growth mode,and it is difficult to form a continuous thin film.To study the physical properties of Bi VO₄ films such as transport properties,single-crystal Bi VO₄ epitaxial continuous films are required.This paper mainly focuses on the preparation of single crystal Bi VO₄ epitaxial continuous thin films by magnetron sputtering technology.The details are as follows:（1）The influence of substrate on the growth mode of Bi VO₄ film.Bi VO₄ thin films were prepared on yttrium-stabilized zirconia（YSZ（001））substrates without conductive buffer layer by magnetron sputtering.Growth patterns have no effect.Single-crystal Bi VO₄ films cannot be prepared on untreated strontium titanate（STO（001））substrates.Bi VO₄ films grown on treated STO（001）substrates tend to grow laterally.Frank-van der Merwe grows possible.（2）The Bi VO₄ film prepared on the treated STO（001）substrate by the method of magnetron sputtering using the target with the atomic ratio of Bi to V of 1:1 has the presence of V oxide impurities.Phase-pure Bi VO₄ thin films can be grown on treated STO（001）substrates using a Bi to V atomic ratio of 2:1.The structure and surface morphology of the Bi VO₄ film were tested,and it was proved that the Bi VO₄ film was epitaxially grown by Frank-van der Merwe on the STO（001）substrate,and the epitaxial relationship was BVO（100）//STO（001）.The photocatalytic performance of BVO/STO epitaxial films obtained from the degradation of Rhodamine B is better than that of Bi VO₄ films grown on YSZ.