| Ultraviolet photodetectors have extensive applications in the fields of environmental monitoring,military defense and space exploration.It is of great significance to develop high-performance ultraviolet photodetectors.Compared with traditional solid-state ultraviolet photodetectors,photoelectrochemical ultraviolet photodetectors（PEC UV PDs）have the advantages of high response,simple preparation and low cost.Wide-bandgap metal oxide semiconductor materials are important photoelectrode materials of PEC UV PDs,which have unique photoelectrochemical properties and good stability.At present,there are many wide-bandgap metal oxide photoelectrode materials,including Zn O,Ti O2 and Ga2O3.But their photoelectric performance is limited by the large photogenerated carrier recombination rate.Indium oxide（In2O3）is an important n-type layer semiconductor that has a wide-bandgap（2.6-2.8 e V）,good optical properties,excellent electrical transport properties and high stability.These characteristics give traditional solid-state ultraviolet photodetectors based on In2O3 good light detection performance.At present,research work on In2O3-based PEC UV PDs is just starting.In addition,the photoelectrochemical properties of In2O3-based PEC UV PDs were investigated for the first time in this paper.In2O3 microrods（MRs）derived from MIL-68（In）were synthesized by hydrothermal and annealing methods.In2O3 MRs PEC UV PDs were constructed and the effects of the sample coating amount,bias potential,optical wavelength and optical power density on the photoelectrochemical properties were systematically studied.In2O3 MRs PEC UV PDs have a good photoresponse to UV light,showing a response value of 21.19 m A/W and a detection value of 2.03×1010 Jones at the wavelength of 365 nm,which exceed most reported aqueous-type PEC UV PDs.In2O3 MRs PEC UV PDs have certain spectral selectivity.In2O3 MRs PEC UV PDs have remarkable response speed,with rise time and decay time of 0.5 s and 1.1 s,respectively.In2O3 MRs PEC UV PDs have excellent multicycle and long-term stability at 365 nm.In2O3 submicron cubes（SMCs）films were directly grown on FTO by hydrothermal and annealing methods.Self-powered In2O3 SMCs PEC UV PDs were constructed.The effects of growth temperature,electrolyte concentration,bias potential,optical wavelength and optical power density on the photoelectrochemical properties were studied systematically.In2O3 SMCs PEC UV PDs show a good response to 365 nm UV light,with a high response value of 44.43m A/W and a high detection value of 8.55×1010 Jones at zero bias.The response speed of In2O3SMCs PEC UV PDs is 0.02/0.03 s,which is approximately two orders of magnitude higher than In2O3 MRs PEC PDs.In2O3 SMCs PEC UV PDs show good multicycle and long-term stability under 365 nm irradiation,with the photocurrent remaining at 98.9%of the initial value after 100cycles of optical switching.In addition,In2O3 SMCs PEC UV PDs show excellent application potential in underwater optical communication.In this paper,high-performance In2O3 MRs PEC UV PDs and self-powered In2O3 SMCs PEC UV PDs were designed and constructed.The optoelectronic properties of In2O3-based PEC UV PDs were explored for the first time,laying a foundation for their applications in the fields of high-performance optoelectronic devices. |
