Epitaxy And Ion Implantation Implementation Method And Electrical Properties Study Of Novel Low Capacitance Electrode Silicon Detectors

Silicon detectors,fashioned from silicon semiconductor materials,are highperformance particle detectors boasting elevated sensitivity,compactness,and ease of integration.Owing to their refined fabrication techniques and practical utility,they have found widespread applications across medical,aerospace,and high-energy physics experiments.In this paper,we present two distinct low-capacitance silicon detector designs,along with their implementation methods,by modifying the conventional silicon detector.We employ three-dimensional modeling and simulation of these detectors’ electrical properties using Technology Computer Aided Design(TCAD)tools.Furthermore,we investigate the detectors’ electrical performance through relevant theoretical calculations and simulation analyses.The main contributions of this paper can be summarized as follows:1.We propose an innovative three-dimensional(3D)hemispherical silicon detector,dubbed the 3D Epitaxial-Implanted Spherical Electrode Silicon Detector.The detector’s3D electrodes can be fabricated using a planar process that combines epitaxial growth and ion implantation techniques.The hemispherical cathode and central collection electrode maintain equal distances,rendering the detector’s full depletion voltage uninfluenced by the silicon wafer thickness and solely dependent on the electrode spacing.2.Theoretical analyses and simulations reveal that the 3D Epitaxial-Implanted Spherical Electrode Silicon Detector offers lower capacitance and depletion voltages compared to traditional 3D detectors.Its internal potential and electric field distributions exhibit no angular dependence,ensuring smooth potential distribution devoid of potential saddle points,along with the absence of zero or low-field regions,which enhances the charge collection efficiency.The low-capacitance feature provides the detector with a high signal-to-noise ratio advantage,leading to increased sensitivity and energy resolution.We also design a detector array and simulate potential,electric field,and weighting field distributions.Simulation results demonstrate that the hemispherical electrode design ensures excellent array isolation,free from crosstalk,with uniform potential and electric field distributions,and superior position resolution,making it suitable for photon science applications,including X-ray imaging.3.We introduce a pixel detector structure with a floating electrode design,along with its implementation method,and compare its electrical properties with those of two other pixel detectors via simulation and analysis.The floating electrode design reduces detector capacitance without compromising other electrical performances,decreases detector noise,and improves the signal-to-noise ratio.Additionally,the floating electrode assists the detector in voltage division,eliminating high-field regions at the collection electrode and reducing the likelihood of detector breakdown.