Study On Photovoltaic Characterization Of Non-doped Heterojunction Solar Cells Based On Modification Of PEDOT:PSS

Silicon solar cells have become important pillars of the renewable energy sector due to their excellent photovoltaic properties and mature mass production technology.Nevertheless,present crystalline silicon solar cells still have the problem of high power generation costs.By combining monocrystalline silicon with high carrier mobility and wide photoresponse range with PEDOT:PSS,which is an organic conducting polymer with low temperature solution preparation,adjustable band gap and excellent light transmission,PEDOT:PSS/Si organic-inorganic hybrid solar cells can be manufactured with low production costs.In this paper,dopant-free PEDOT:PSS/Si heterojunction solar cells have been fabricated at room temperature using PEDOT:PSS as the hole-selective transport layer and n-type monocrystalline silicon as the absorber,and several strategies to improve the performance of such cells have been explored.The details of the study and the conclusions reached are briefly summarized below.(1)The PEDOT:PSS films have been modified by solution post-treatment to improve the electrical conductivity of the films,thereby enhancing the PV properties of the PEDOT:PSS/Si heterojunction solar cells.It was shown that post-treatment of PEDOT:PSS films with dodecylbenzene sulfonic acid and methanol increased the conversion efficiency of the cells from 9.74% to 11.37%.(2)Doped PEDOT:PSS with 4-(3-ethyl-1-imidazolio)-1-butanesulfonate(ION E),3-Glycidyloxypropyltrimethoxysilane(GOPS)and Nafion to modify the PEDOT:PSS/Si interface and enhance the photovoltaic conversion efficiency of PEDOT:PSS/Si heterojunction solar cells.Compared to the PEDOT:PSS undoped devices,the conversion efficiency of the doped devices has been improved to varying degrees.The increase in efficiency is related to the organic molecule doped and the amount of doping.The cell achieves conversion efficiencies of 10.72% with 0.2 wt%ION E doping,10.67% with 0.5 wt% GOPS doping and 11.72% with 1 wt% Nafion doping.(3)Investigation into the fabrication of PEDOT:PSS/Si hybrid cells with two hole transport layers.It was found that by designing the preparation and modification processes of the two hole transport layers separately,the carrier transport ability of the hole transport layer was simultaneously improved as well as the passivation effect at the PEDOT:PSS/Si interface,thus exploring a new idea to improve device performance.The conversion efficiency of the device was increased from 10.58% to 12.33% after Nafion doping and solution post-treatment of the two hole transport layers,respectively.