Research And Design Of High Voltage N-type Dual Phase DC Motor Driver Chip

DC motors are everywhere in our lives,from hairdryers,fans,electric toys to cars and airplanes.The operation of a DC motor cannot be separated from the role of a motor drive chip.The motor drive chip is a chip that integrates CMOS logic control circuits,analog circuits,protection circuits,and DMOS power devices.Motor drive technology,as the key issue in driving electric motors,is currently monopolized by foreign companies such as Texas Instruments and STMicroelectronics.At the same time,high prices make downstream manufacturing enterprises face huge production costs.As one of the fields of bottleneck,domestic semiconductor enterprises such as Zhongke Microelectronics are also engaged in relevant research,but chip products have shortcomings such as high power consumption and severe heat generation.Therefore,it is necessary to develop a motor drive chip with low power consumption,high integration,and strong driving ability to enhance core competitiveness and realize the development path of domestic chips from replacement to strength.This paper studies and designs a high-voltage N-type dual phase DC motor driver chip.First introduces the working principle of the H-bridge circuit and several freewheeling modes of the H-bridge circuit,including fast attenuation mode,slow attenuation mode,and mixed attenuation mode.The overall architecture of the chip and its key parameters are given.Based on the driving H-bridge circuit,the analysis and design of the charge pump circuit are given.The circuit principles of other sub modules in the chip are introduced in detail,including bandgap reference circuits,over temperature circuits,under voltage circuits,over current circuits,and other protection circuits,as well as oscillator circuits.Based on Huahong Hongli 0.18μm BCD process,the spectre simulation tool of Cadence Company is used to simulate and verify each sub module and the overall circuit.Verify through simulation whether the sub module and the overall circuit can work properly under different process angles,and whether the simulation results meet the parameter index requirements of the circuit design.The simulation results show that the operating voltage of the chip is 8～40V,the operating temperature range is-40～150℃,and the conduction resistance of the power switch tube is less than 0.4Ω.By comparing the external input reference voltage with the voltage generated by the external resistance on the low side of the H-bridge,the current can be limited to a known level,which can significantly reduce the power consumption of the system,and in sleep mode,the static current is less than 6μA.Under normal operating conditions,the static current of the circuit is 1.5m A.The charge pump circuit studied in this article can accurately output the required driving voltage and device process characteristics,which greatly reduces the conduction loss of the H-bridge power transistor.The bandgap reference circuit studied improves the overall stability of the circuit and reduces the chip area through a structure composed of a current source,a voltage regulator diode,and a differential circuit;At the same time,the chip also packages modules such as analog circuits,logic circuits,and H-bridge power MOS devices together,greatly improving the integration and reliability of the entire system.Finally,based on the reliability design and matching principle of the layout,the layout design of some sub modules and the overall circuit is given,with the overall layout area of 1800μm × 1700μm.