Study On Electron Irradiation Model Of InP-based HEMT

InP-based high electron mobility transistor（HEMT）has excellent properties such as high frequency and low noise,which makes it of great application value in the design of aerospace millimeter-wave communication chip system.Damage induced by particle irradiation is the key factor leading to the failure of millimeter-wave chip system.As a bridge between device fabrication and chip design,device model is an important tool for irradiation damage mechanism research and reliability evaluation of InP-based HEMT.In this paper,the effect of multi-dose electron irradiation on the Kink effect of the device output return loss(S₂₂)is studied by using a 17-parameter InP-based HEMT small signal equivalent circuit model.On the other hand,an analytical model for the direct current（DC）characteristics of InP-based HEMT under single-dose electron irradiation is established.The details of the study are as follows:1.The effect of 1 Me V electron irradiation has been comprehensively analyzed on the Kink effect in S₂₂of domestic InP-based high electron mobility transistors（HEMTs）.The radiated fluence is varied among 1×10¹⁴ cm^-2,1×10¹⁵ cm^-2,1×10¹⁶ cm^-2.The change size of Kink effect before and after irradiation is expressed by self-normalization and the standard deviation.The results show that the Kink effect appears at 36 GHz and becomes distinct under sub-threshold region.The non-monotonous trend of S₂₂curve caused by Kink effect increases as fluence increases.The dual-feedback circuit methodology is adopted to explain the influence of electron irradiation on Kink effect,moreover the change of transconductance and gate capacitance is the main reason for the influence of electron irradiation on the Kink effect in S₂₂.2.A new modeling approach suitable for DC characteristics of InP-based HEMT under single-dose electron irradiation is presented.The relationship between the DC characteristics before and after a single dose of electron irradiation is inferred on the basis of the long-gate HEMT transmission mechanism.This relationship characterizes the effect of irradiation-induced changes in DC characteristics and irradiation-induced changes in DC characteristics on the signal transmission amplitude information.The validity of the developed modeling approach is verified by comparing the simulated characteristic with measured data of 100 nm gate-length and 2×50μm gate-width InP-based high electron mobility transistor（HEMT）under different dose of electron irradiation(1×10¹⁴ cm^-2,1×10¹⁵ cm^-2,1×10¹⁶ cm^-2).This study provides new ideas to study irradiation damage,effectively promotes the development of InP-based HEMT device models under the influence of irradiation environment,and improves the accuracy of reliability assessment of InP-based HEMT devices in aerospace chip applications.