Research And Design On Key Technologies Of Silicon-based Millimeter-wave Transceiver Front-end

In the wireless communication system,transceiver front end determines the capacity and transmission rate of the wireless network.With the continuous rapid growth of mobile data traffic demand,millimeter wave transceiver front-end has become a global research hotspot now.However,there are still some problems to be solved in power consumption,noise and area of millimeter wave transceiver front-end.Therefore,an in-depth study of the millimeter wave transceiver front-end and its key circuits is carried out.The main work includes:(1)The millimeter-wave transceiver front-end architecture analysis.Analysis of the front-end architecture of the millimeter wave transceiver.By analyzing the advantages and disadvantages of the traditional millimeter-wave transceiver architecture,the feasibility of the bidirectional millimeter-wave transceiver front-end is verified.Compared with the traditional single-link transceiver front-end,the bidirectional transceiver front-end can realize the multiplexing of transceiver blocks,decrease the design time and complexity,and reduce the area of the transceiver front-end to 50%of the original.(2)By optimizing active devices and passive devices in the design of millimeter-wave power amplifiers,a Ka-band high-efficiency power amplifier based on 40nm CMOS technology is proposed,with a peak power added efficiency of 42.06%and a power gain of26.01 d B;Considering the increasing peak-to-average power ratio(PAPR)of the current modulated signal,an on-chip Doherty power amplifier operating at 28GHz is designed,which achieved a power added efficiency of 26.5%under 6d B back-off power,and the peak PAE is37.38%,the output power is 23.3d Bm.(3)Aiming at the problems existing in the application of low-noise amplifier circuits in the millimeter wave frequency band,a novel three-coil coupling matching technology was proposed,and a low-noise amplifier based on 40nm CMOS technology was designed.The final simulation results show that the 3d B bandwidth of the designed LNA is 27GHz,the operating frequency band is 38GHz-65GHz,and the minimum noise figure is 3.6d B.(4)On the basis of the above research,this paper designs a broadband millimeter-wave bidirectional transceiver front-end.The transceiver front end adopts a novel bidirectional power amplifier circuit,which solves the leakage current problem existing in the original bidirectional amplifier circuit.For the different performance requirements in transmit and receive modes,a noise performance improvement technology for the bidirectional amplifier circuit is proposed,which improves the noise performance of the bidirectional transceiver front-end.The system achieves an output power of 15.24d Bm and a noise figure of 6.87d B,and the core area of the chip is only 0.08mm~2.