Research On Circuit Performance Degradation Analysis And Optimization Method Based On HCI Effect

With the development of semiconductor processes and technology nodes,integrated circuits and systems used in aerospace avionics,vehicle transportation and biomedicine have become extremely sensitive to reliability problems such as aging mechanism and parameter change process.In order to reduce production cost and improve circuit performance,integrated circuit technology introduces new materials,new technology and new device structure,which poses a great challenge to maintain high reliability of integrated circuits.At the same time,some key materials in the process are approaching their physical limits,and the electric field intensity and current density of devices are increasing,which further increases the probability of various failure mechanisms.One of the most important physical failure mechanisms of modern semiconductor devices is HCI effect.As the degradation of semiconductor devices will directly affect the circuit and system performance,the circuit reliability related to HCI effect has become the focus of researchers in recent years.In this paper,circuit degradation under HCI effect is studied.The main contents are as follows:1.HCI degradation analysis and circuit reliability optimization are added on the basis of the traditional analog circuit design process,and a reliability optimization design process based on HCI effect is proposed.The reliability optimization design process mentioned above can improve the capability of resisting HCI degradation of circuit,which is suitable for simulation design optimization of small scale circuit.2.The single pipe resistance load current mirror,Cascode current mirror,single stage amplifier,current source load differential amplifier and the use of MOS resistance structure as basic two-stage operational amplifier of miller compensation and use pure resistance as miller compensation structure basic two-stage operational amplifier circuit such as the basic unit were analyzed under the effect of HCI degradation simulation,It is concluded that the performance parameters of these basic cell circuits are affected differently by HCI effect.The degradation simulation analysis of basic unit circuit under HCI effect plays a positive role in understanding the influence of HCI on circuit reliability.3.The degradation of HCI effect in current mirror band-gap reference voltage source and operational amplifier band-gap reference voltage source is simulated systematically.Then,according to the reliability optimization design process of analog circuit based on HCI effect,the band gap reference voltage source with operational amplifier structure is optimized from the circuit structure.NMOS working in linear region is connected in series in the branch where the key device is located,which cancels the increase of drain current increment on the key device and inhibits the effect of HCI degradation.The degradation of temperature coefficient TC decreases from 5.6129% to 0.7964% after one year of operation,and other parameters such as reference output voltage and Power Supply Ripple Rejection PSRR are optimized,which significantly improves the anti-HCI degradation capability of band-gap reference voltage source.