Design Of 2.4～5.25GHz Balun-LNA In 22nm CMOS Technology

In recent years,with the increasing demand of wireless communication market,more attention has been paid to multi-band and multi-standard RF chips.The whole RF chip industry is moving towards higher frequency band,better compatibility and higher system integration.Different from the traditional narrowband RF chip,the wideband RF chip is compatible with multiple standards at the same time to adapt to various application environments and reduce the area and cost of the chip.As the first-stage active circuit of the RF receiving system,the LNA determines many important performances such as the frequency band and noise of the system,so it has become an important research field in the academic.This thesis presents a 2.4～5.25GHz single to differential low-noise amplifier（Balun-LNA）using 22nm CMOS technology.Due to common gate,common source balun load employed,the proposedBalun-LNA realizes differential outputs.The current-reuse technique is introduced to optimize the noise and gain of the circuit.A balanced buffer is used to reduce the gain mismatch and phase mismatch of the differential outputs.By introducing the gain control circuit to realize the high and low gain mode,the contradiction between low noise and high linearity of the circuit is improved.In the frequency range of 2.4～5.25GHz,the post-simulation results show that the noise figure of Balun-LNA is 1.36～1.43dB,the voltage gain is over 29.0dB,the S₁₁ is less than-11.0dB,the gain mismatch is below 0.22dB,and the phase mismatch is below 0.6°in the high-gain mode.The IIP3 is more than-3.3dBm,and the noise figure is 9.2～10.1dB in the low-gain mode.The total current of the circuit is 19.6mA at1V supply voltage,and the layout area of the core circuit is 0.34mm².The broadbandBalun-LNA in this thesis meets the requirements of circuit design and can be applied to RF receiving systems compatible with digital-intensive communication,radar and navigation.