| Electron beam lithography is a very important microfabrication technology emerging in the field of microelectronics,and its appearance pushes the device feature size to a more refined development direction.Because electron beam lithography has the advantages of high resolution,easy control,high precision of processing devices,and no need for expensive mask processing,electron beam lithography is increasingly applied in the field of microfabrication.However,due to the influence of various process conditions in the processing process,to obtain the pre-designed graphics,it is necessary to carry out repeated experiments and consume a lot of vigor and material resources.Therefore,a corresponding model is established in this paper to simulate the electron beam lithography process,which can effectively save development time and cost.In this paper,the Monte Carlo method is used to simulate the movement process of electrons in the photoresist and the substrate,and the process is programmed and simulated by software,and the electron scattering map,the energy deposition distribution map and the etching and development map are obtained respectively.And the influence of incident electron beam energy,photoresist thickness and substrate material on the result image is analyzed,so as to select suitable conditions to reduce the influence of proximity effect,and to etch any complex three-dimensional pattern structure in combination with practical applications.In order to improve the efficiency of software simulation,this paper uses the CUDA programming model to parallelize the simulation code.The parallel accelerated modules contain electron scattering,energy deposition and development etch modules.After that,the code after parallelization is further optimized.Finally,comparing the time of serial computing and parallel computing,the speed-up ratio of the energy deposition module can reach about 4 times,and the speed-up ratio of the development and etching module can reach nearly 2 times. |
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