Study On The Effect Of Resistive Switching Characteristics Of Rare Earth Doped The Oxide Memristors

The development of the Internet of Things and industry has led to an explosion in the amount of information available and new types of memory have emerged.Memristors are one of the most promising new memories due to their ultra-small size,simple structure,fast erasure speed,ultra-long retention period,sustainable miniaturisation and compatibility with CMOS processes.Among them,oxide memristors are widely investigated because of their simplicity of preparation,easy control of composition and excellent performance.Rare earth doping has been shown to be used to improve the performance of oxide memristors,so the effect of resistive switching characteristics of rare earth doped the oxide memristors is a topic worthy of investigation.The main research and results of this paper are as follows:1.Hafnium oxide memristors,nickel oxide memristors,La,Ce,Gd doped hafnium oxide and nickel oxide memristors prepared by magnetron sputtering and photolithography.2.The effects of HfO_xfilm thickness,annealing temperature and electrode size on the electrical properties of Ta/Hf Ox/Au/Cr/SiO₂/Si memristors were investigated and the resistance switching mechanism was analysed.As the film thickness increases,the forming voltage increases and the resistance ratio increases;after annealing at 400degrees,the resistance ratio increases and both endurance characteristic and data retention characteristics are improved;HRS decreases as the electrode increases.The formation and breakage of oxygen vacancy conducting filaments is the main cause of the resistance shift in the amnestic resistor.3.The effects of doping with three rare earth elements,La,Ce and Gd,on the electrical properties of HfO_xmemristors were investigated.The doping can reduce the operating voltage of the memristor and increase the storage window.The formation energy of oxygen vacancy near the rare earths can be reduced,the durability and data retention characteristics are greatly improved,and the doping does not change the resistive mechanism of the memristor.4.The effects of NiO film thickness,annealing temperature and electrode size on the electrical properties of Ag/NiO/Au/Cr/SiO₂/Si memristors were investigated.increased NiO thickness resulted in increased forming voltage,set voltage and increased resistance ratio.The increase in annealing temperature increases the operating voltage of the memristor,and both endurance characteristic and data retention characteristics are improved.The electrodes increase and the high set resistance value decreases.The formation and breakage of conductive filaments leads to a resistance state shift in the memristor.5.The NiO memristors before and after doping were compared to analyse the effect of La,Ce and Gd rare earth doping on the electrical properties of NiO memristors.Innovated in doping methods.After doping,the set voltage of the NiO memristor is reduced and the storage window is increased.The nanocrystals introduced by this doping allow for an enhanced local electric field and improved voltage distribution,endurance characteristic and data retention characteristics of the memristor.Doping with rare earth elements also does not change the resistive mechanism of the NiO memristor.