Research On Biomimetic Synaptic Devices And Memory Based On Floating Gate Thin Film Transistors

Since the 21st century,with the development of artificial intelligence and big data analysis,information efficiency and intelligent processing have become the focus of technological development in various industries,serving as a bridge for the integration of technologies across multiple fields.The support of artificial intelligence and big data is indispensable for national cybersecurity,smart grid,and Io T technology.Subsequently,the processing and storage of a large amount of information data require advanced intelligent algorithms and hardware system support.The traditional von Neumann computing architecture and Moore’s Law bottleneck have limited the development of intelligent electronic technology.Memory,as one of the basic components of computers,has always been highly valued.The rise of efficient and parallel brain like neural morphology computing has sparked research and reflection on artificial synapses.As an important component of brain like computing,artificial synapses have been widely discussed in recent years.Floating gate thin film transistors,on the other hand,have strong adaptability in studying device material combinations and structural selection,as well as easy control of threshold voltage drift and reliable charge capture ability.Therefore,they also frequently appear in the research of artificial synapses and memories.Aiming at the future development trend and needs of thin film transistors,based on floating gate transistors,this paper has studied two types of devices,such as artificial synapses and memories,and tested and analyzed the photoelectric effects involved in related devices.The following research work has been done:1.Research on synaptic devices based on floating gate thin film transistors.Using silicon wafer with silicon dioxide layer as the substrate,zinc oxide（4nm Zn O）and aluminum oxide（4nm Al₂O₃）were deposited by ultrathin and transparent atomic layer deposition as the charge trapping layer and tunneling layer;A floating gate thin film transistor was prepared using P-type semiconductor PDVT-10 as the active layer.A series of performance tests were carried out on transistors,and the changes of synaptic plasticity under brain memory behaviors,including EPSC/IPSC,PPF/PPD,LTD/LTP,STM and LTM switching,were successfully simulated.At the same time,based on the light absorption characteristics of semiconductors,the artificial synaptic plasticity under light conditions was tested.Moreover,the artificial synapses in this article can flexibly switch between volatile and non volatile operating states with changes in gate voltage.The ultra-thin oxide floating gate layer used has high chemical stability and smooth interface,good compatibility with the organic solution method,and high transparency,which has advantages in transparent electronic research.2.Multilevel memory based on floating gate transistors are researched.Using quantum dot doped PVP layer and alumina（Al₂O₃）as the capture layer and tunneling layer of the floating gate structure;A multi-stage memory based on floating gate transistors was prepared using a mixture of P-type IDTBT and N-type PCBM as active layers and silicon wafers with silicon oxide as substrates.Tests have shown that the memory has a storage window of about 60V,a memory ratio of 10⁴,and a retention time of up to 10⁴s.Thanks to the photoelectric effect of semiconductor heterojunctions,multi-level information storage under light modulation has been achieved.