Research On IGBT Module Junction Temperature Measurement And Turn-on Current Oscillation

At present,with the continuous improvement and development of related theories,electronic power system has been widely used in the fields of transportation,aerospace and so on because of its extremely high energy conversion rate,the high degree of controllability in the process of its work also makes people pay more and more attention to it.In most cases,the working environment of electronic power system is very bad,so people pay much attention to the reliability of its working process.The Power semiconductor device is a core component of the system,and if it is not sufficiently stable in the course of its work,then the entire system can not be guaranteed to function efficiently.Currently,in order to monitor the working state of the Power semiconductor device in real time,the common method is to measure the junction temperature,which is also widely accepted by the industry.The bad working environment determines that the device will face a variety of interference problems in its whole working cycle,of which oscillation interference is the most prominent.Measuring junction temperature to evaluate the operating state of power semiconductor devices is currently the most common method.Due to the application of power electronic systems under harsh conditions such as high frequency and high voltage,the oscillation interference problem caused by power semiconductor devices cannot be ignored.In order to improve the reliability and safety of power semiconductor devices,it is also necessary to study the oscillation interference problem of power semiconductor devices.IGBT module junction temperature measurement and opening current oscillation two aspects of research In this paper,based on IGBT module,including turn-on current oscillation and module temperature measurement,theoretical research:1.Analyze the influencing factors of IGBT module reliability.The potential influencing factors of the stability in the process of its work are explored in depth.Its working principle and dynamic and static characteristics are analyzed and discussed in detail.Based on the basic structure of IGBT module,the failure reason of IGBT module in the working process was studied,and the solder layer aging caused by temperature fluctuation was found,and the judgment standard of IGBT module failure is calibrated.2.A dynamic junction temperature estimation method for IGBT modules based on I_rris proposed.Firstly,the reverse recovery stage in the turn-up process of IGBT module is analyzed in detail,and a transient model considering parasitic parameters is established.Furthermore,the change of I_rrwith junction temperature and the change of I_rrwith load current are analyzed,and the mathematical relationship between the three is derived.An experimental platform was built to experiment with IGBT modules,and a junction temperature prediction model of IGBT modules based on I_rrwas obtained.Through the analysis of the verification experimental results,the accuracy of the model is evaluated,and the accuracy of junction temperature estimation is high.3.Study the current oscillation process in the turn-on stage of the IGBT module.Firstly,the transient model of current oscillation of IGBT module is established,and then the factors affecting the current oscillation characteristics are analyzed.The purpose and principle of double pulse test are briefly introduced.A double-pulse simulation test platform is built to measure the current oscillation characteristics of different parasitic parameters under different values to verify the correctness of the model.