Investigation On Through Glass Via Technology Based On Laser-Induced Deep Etching And Development Of Integrated Passive Devices

With the rapid development of integrated circuits(ICs),Moore’s Law seems to come to the end.Traditional ICs suffer serious challenges.The newly emerged 2.5D packaging technology improves the space utilization rate of the substrate by making full use of the three-dimensional space.Compared with traditional planar integration technology,2.5D integration technology allows the signal transmission through vertical interconnect structures,and thus has a series of advantages such as high integration density,low power consumption,and flexible design.And it has attracted considerable research attentions in the field of semiconductor.At present,most of the 2.5D integration technology mainly adopts the silicon-based interposer technology based on the Through Silicon Via(TSV)structure.However,the silicon interposer has the disadvantages of poor high-frequency performance and high cost.Therefore,glass interposer based on Through Glass Via(TGV)structure has become a good alternative of silicon interposer,because of its excellent high-frequency performance,low cost,availability of large size,etc.And it gradually becomes a promising development direction of the next generation interposer technology.In this paper,the key process of through glass via(TGV)technology and integrated passive devices(IPDs)on glass substrate was studied.To begin with,this paper focused on the principle of laser induced deep etching(LIDE),including the principle of laserinduced selective etching(LISE)and the etching mechanism of modified glass sample when it was immersed in hydrofluoric acid solution.TGVs with excellent profile on borosilicate glass were achieved by optimizing the process parameters of LIDE.In addition,the electrical characteristics of TGV were studied by constructing the equivalent circuit model and physical model.And effects of geometry,process and materials of TGV were simulated by full wave electromagnetic simulator.Secondly,based on TGV technology,the research on 3D(three-dimensional)TGV inductors and MIM(metal-insulator-metal)capacitors on glass substrate was carried out.Here,the basic principle of integrated inductors were studied.Furthermore,an inductor model based on TGV technology was proposed and the principle of the TGV inductance was analyzed.Subsequently,the effect of key geometric parameters of TGV inductor on its electrical performance was simulated and analyzed in HFSS(High Frequency Structure Simulator).Additionally,the basic principle of MIM capacitor on glass substrate was introduced.A full wave electromagnetic field simulation model of glass-based MIM capacitor was established,and the impact of key parameters of MIM capacitors on the Q value and capacitance of the capacitor was studied.Besides,the research on glass-based integrated passive filter was carried out.Firstly,the basic principles of passive filters and transmission zeros technology in filter design were studied.Then,with the help of simulation software HFSS and ADS,a process of the design of glass-based passive filter was proposed.Based on the proposed design process,a glass-based low-pass filter was designed.The simulation results showed that the maximum insertion loss of the designed filter in the passband was0.53dB,the filter had two transmission zeros,and the attenuation at the two transmission zeros were-34dB and-47dB respectively,which reached the expected design targets.Finally,the processing and test of a glass-based band pass filter which can be applied to N77 were completed.