| The frequencies of terahertz radiation lie between microwave and infrared frequencies,and there has been great interest in the scientific community since the 1920s,but the terahertz frequency range is still the least exploited region of the electromagnetic spectrum one.Contemporary applications of THz frequencies mainly include fast response and gas identification systems,security inspection equipment for a series of applications such as detection and ranging,and military radars.With the increasing demand for higher frequency bands,the commercial value of terahertz technology is gradually emerging.Terahertz technology is in the golden age of rapid development in today’s society.In view of the current development situation of terahertz detectors,this paper mainly studies the integration of terahertz signal sources and detector circuits.The main contents include the following three aspects:1:The planar Gunn diode device of InAlAs/InGaAs material was designed and fabricated.We propose a process flow for the preparation of planar Gunn diode devices of InAlAs/InGaAs materials,which includes various advanced methods such as electron beam evaporation,electron beam exposure,and wet etching;After preparation,we use high-precision optical microscope,scanning electron microscope(SEM)and other high-precision measurement equipment to characterize the prepared planar Gunn diode device,and optimize the process flow according to the characterization results.The results are in line with the expected results;after that,we conducted a series of performance tests on the planar Gunn diode devices prepared by the above process using the built high-frequency test system.The results show that the device has obvious negative differential conductance.In the test of the fundamental frequency oscillation frequency of,the results are basically consistent with the calculation results of the formula.2:A Gunn diode oscillator based on a SIW resonator is designed and fabricated.We propose a Gunn diode oscillator based on a SIW resonator,and the resonator is first modeled.After simulating the model,we get that the device has a resonance frequency around 42GHz,which is consistent with the oscillation frequency of the planar Gunn diode in the previous chapter.It means that the two can be combined into a higher frequency terahertz emission source.Then we drew the corresponding layout based on the established model,and successfully fabricated a Gunn diode oscillator device based on SIW resonator by wet etching and other processes.After analyzing it with a vector network analyzer,we determined that its resonant frequency was as expected.3:A patch antenna module that can be used for high frequency detection is designed.We tried to design a patch antenna module that can receive the signal frequency corresponding to the terahertz signal source we prepared.In the simulation model,we determine its resonant frequency and electric field distribution parameters,and confirm that it can match the Gunn diode oscillator based on SIW resonator designed in this paper. |
