Research On Low-Leakage Nonvolatile Reconfigurable Transistor With Floating Gate Source-drain

The growing maturity of information technology is inseparable from the continuous development of microelectronics technology.As the core of microelectronics technology,Integrated Circuits must continue to strive towards the goals of low-cost and high-performance,while at the same time overcoming Moore’s Law problems such as short-channel effects and reduced mobility due to shrinking dimensions.Today,Integrated Circuit technology has penetrated into all aspects of our lives.Therefore,this paper proposes a reconfigurable field-effect transistor(FPG-RFET)with a nonvolatile floating programmable gate.Unlike conventional RFETs,it introduces a nonvolatile charge storage layer as a floating program gate,rather than a program gate that requires a separate power supply.In addition,the control gate can also program the charge stored in the floating program gate.Therefore,the proposed FPG-RFET essentially requires only one independently powered control gate for reconfigurable operation.Among them,the control gate can effectively reduce the static power consumption and the generation of reverse leakage current by adjusting the equivalent voltage in the floating program gate.The designed device is optimized step by step from the initial idea to get the final device result with better performance.This subject uses Silvaco TCAD simulation software to conduct comprehensive simulation analysis of newly designed device structures.The working mechanism of the non-volatile floating program gate after adding charge is analyzed,and the key parameters such as the internal electric field strength,carrier concentration,potential and sub threshold swing of the devices are measured and analyzed by using the function options in Tonyplot2 D to overlay and analyze the data.In the optimization process,the control variable method is selected to observe its influence on the device performance by changing only one parameter,so as to gradually analyze other parameters that affect the device performance,so as to obtain the final optimized structure.