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Research On Photoelectric Properties Of CuCr O2 And ZnO Materials Based On Wide Band Gap Semiccondctor

Posted on:2023-09-24Degree:MasterType:Thesis
Country:ChinaCandidate:H F HuFull Text:PDF
GTID:2568306830999159Subject:Optical Engineering
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ZnO(Eg=3.37 e V)and CuCrO2(Eg=3.2 e V)are both belong to the wide band gap semiconductor materials with many excellent properties.Wide band gap semiconductor materials such as ZnO and CuCrO2 have great development space in the field of optoelectronic devices.Especially in p-type transparent conductive coating,laser,detector,sensor and other aspects of potential application is very important,has become one of the hot topics of material research.By exploring the characteristics of materials themselves and combining different characteristics,new devices can be developed and applied,which provides a certain impetus for the development of photoelectric devices.Therefore,ZnO and CuCrO2 have extensive and profound research significance in both material properties and device applications.The main research contents of this paper are as follows:(1)High-quality CuCrO2 nanoparticles with high crystallinity were prepared by hydrothermal method.The surface morphology and properties of the nanoparticles were characterized by transmission electron microscopy(TEM),X-ray energy dispersive spectroscopy(EDS)and X-ray diffraction(XRD).CuCrO2 nanoparticles were encapsulated in polyimide(PI)solution and prepared as film samples.A two-channel detection device was set up to study the nonlinear response of CuCrO2-PI(CCO-PI)film and PI film by comparison.The highest transmittance of CuCrO2-PI film is about 58%,and that of PI film is about 75%.(2)The saturation absorption characteristics of CuCrO2 was studied in a baited fiber ring laser(as a saturable absorber for pulse fiber laser output).In the first stage,passive Q-switched pulses were generated at 82.58 m W pump power.When the pump power reached140 m W,the central wavelength was 1562.2 nm,the pulse width and repetition frequency were 1.8μs and 56.8 k Hz.The maximum output power and pulse energy are 11.4 m W and21.2 n J,respectively.The second stage appeared at 40.2 m W,at which the central wavelength was 1564.4 nm,the pulse width was 896 ns,the pulse interval and repetition frequency were0.63 ms and 1.39 k Hz.In the second stage,the maximum output power and pulse energy are98.7 m W and 88.9 nj,respectively,8.6 and 4 times of that in the first stage,and the simultaneous compression of pulse duration and repetition frequency is achieved(the shortest pulse duration is 896 ns and the maximum repetition frequency is 2.46 k Hz).(3)CuCrO2/ZnO composed of ZnO nanorods and Cu Cr1-xMgxO2 film.ZnO nanorods were grown on CuCrO2 film(prepared by sol-gel method)by hydrothermal conditions,and the detection characteristics was studied.Experimental tests were carried out under 365 nm,620 nm and 940 nm,respectively,and it was found that it only responded at 365 nm,indicating that it has detectivity at 365 nm(λ=3.01 m W/cm2)UV band,with a rise time of2.7 s,a decay time of 1.8 s,and a light-dark current ratio of 2.3.The optical response value is about 3.2 A/W.(4)UV detection enhancement of CuCrO2/ZnO was studied.The detection performance of the device was further enhanced by Mg-doped CuCrO2(CCMO).It can reduce its intrinsic resistance and increase the hole concentration to enhance the conductivity.Under 365 nm,the light-dark current ratio of the doped device increases to 6,the rise time is reduced by half to 1.4 s,the attenuation time of the device decreases to 1.6 s,and the light responsivity value of the core parameter of the device from 3.2 A/W increases to 5.5 A/W.
Keywords/Search Tags:wide band gap semiconductor, nonlinear, CuCrO2, ZnO, detection performance
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