High Performance Gallium Nitride Based LED Emitter On Silicon Substrate And Its Visible Light Communication Application

In recent years,with the rapid development of semiconductor materials,visible light communication is developing into a new solution of wireless communication network to deal with the crowded radio spectrum.Visible light communication uses LED as light source to carry signal to transmit information,so that led can take into account the role of lighting and communication.In order to improve the photoelectric performance and light output efficiency of silicon substrate gallium nitride based LED devices,this paper will explore silicon substrate gallium nitride based LED emitters with high performance.At present,the main bottleneck restricting the application of gallium nitride based LED devices on silicon substrate is that both silicon substrate and gallium nitride epitaxial layer will absorb the emitted light of LED devices,which will have an adverse impact on their optical properties.In order to derive the light emitted from the active layer of LED,this paper first studies the photoluminescence gallium nitride based blue LED device on silicon substrate with electrodeless suspended film structure.The LED suspended thin film device with small thickness,large area,small overall deformation and excellent optical performance is realized by using the back process of the combination of lithography process,deep reactive ion etching technology and fast atomic beam etching technology.Then,on this basis,this paper continues to study high-performance suspended nitride thin film LED devices,studies electroluminescent silicon substrate gallium nitride based blue light LED devices with electrode suspended thin film structure,proposes a suspended thin film blue light LED device realized by double-sided process,and carries out photoelectric test and communication test to explore its photoelectric characteristics and communication rate.Finally,the electrical characteristics of gallium nitride based LED emitter on high-performance silicon substrate are simulated and analyzed,which provides more sufficient support for the optimization of the electrical performance of LED devices.In addition,this paper also carries out three-dimensional model finite element simulation analysis for different electrode structures.After the simulation analysis,it provides theoretical support for the optimal design of suspended led transmitter,and provides more possibilities for the development of high-performance suspended nitride thin film LED devices.