Design Of Ka-band Power Amplifier Based On CMOS Technology

Millimeter wave communication has the advantages of abundant bandwidth resources and high detection accuracy,and has extremely high application prospects in important fields such as fifthgeneration communication technology,satellite communication,and vehicle radar.The power amplifier chips manufactured by the traditional three-fifth family process are difficult to meet the requirements of high integration and low cost of millimeter-wave communication systems.Siliconbased chips have the advantages of low cost and easy integration.The power amplifier is the key module in the millimeter wave communication system,which directly determines the key indicators such as the communication distance of the system.In this paper,the design of silicon-based millimeter-wave power amplifier is studied.The main work is as follows:In order to improve the efficiency and output power of the power amplifier,the optimization method of the quality factor of passive devices is studied.In order to reduce the parasitic resistance of transistors,a transistor layout structure that is different from the layout standard library is proposed.In order to overcome the Miller effect of transistors in the millimeter-wave frequency band,a cross-coupling capacitor technology is proposed to improve circuit gain and stability.In order to achieve broadband matching,based on the traditional LC matching network structure,an on-chip transformer matching circuit is designed to achieve a better broadband matching effect.Based on the above technical analysis,this paper designs two power amplifiers working in the Ka-band based on the CMOS process.The first power amplifier adopts the traditional single-channel two-stage common-source structure,and the second power amplifier proposes a two-stage cascade,two-channel synthesis differential common-source circuit based on the traditional structure,and adopts the cross-coupling capacitor technology.The second power amplifier significantly improves the gain and output power performance,reaching an output power of 15 d Bm at the 1d B compression point and a peak additional efficiency of 23%.