High-capacity Organic Field Effect Transistor Memories Based On Nanostructure Topography

With the progress in the rapid development of modern technology,the requirements for memory are getting increasingly higher,which involves larger storage capacity,faster storage speed,stronger data and information protection capability,and low power consumption.The storage capacity of the memory can be improved by increasing the integration of the device in a unit area or by increasing the information storage capacity of a single device.The conventional CMOS manufacturing process is approaching the bottleneck,and organic materials have the characteristics of wide sources,flexibility,low temperature preparation,and large-area preparation,which have become a particularly attractive area for memory research.By adjusting the material properties and film morphology of the charge trapping layer of the Organic Field-Effect Transistor Memory,the storage performance can be greatly improved without increasing the original size of the device.In this dissertation,polyvinylcarbazole was taken as the research object,and a charge trapping layer with diverse morphology was constructed by means of morphology control and the introduction of metal nanoparticles to prepare an OFETM with enhanced performance.The first part of this dissertation explores the film morphology of the PVK-based charge trapping layer.By changing the environmental humidity and solvent volatilization rate during the film preparation process,smooth films and films with different pore size nanostructures were prepared respectively.Using PVK electret material,smooth film morphology and nanoporous film morphology were prepared,which provided good film conditions for the subsequent device fabrication.In the second part of this work,a PVK film with a smooth morphology and suitable pore size was prepared as a charge storage layer under low humidity and high humidity environment through the regulation method of the nanostructured film described in the first chapter.And introduce different metal nanoparticles to discuss the effect of different metal nanoparticles on device performance.Large-capacity organic memories with high mobility,low operating voltage,and high current on-off ratio are fabricated by introducing abundant nanotopography and nanoparticles into smooth films.The final part of this work explores the pore size of the nanopore by changing the solvent evaporation rate through the control method of the film with nanostructures described in the first chapter.Gold nanoparticles were introduced into the upper layer of the film.The influence of film morphology with different pore size on device performance is discussed,and the best film preparation conditions are discussed.Due to the synergistic cooperation of nanostructures and metal nanoparticles,we successfully fabricated large-capacity OFETMs with excellent performance.