Research On Optoelectronic Devices Based On GaN Multiple Quantum Well Materials

With the proposal of national carbon peak and carbon neutrality strategy,social demand for energy is increasingly urgent.How to make good use of light energy,a green low carbon energy,has become a hot research topic.At the same time,with the increasing shortage of radio spectrum resources,how to meet the needs of higher speed and wider range of communication has become a pain point in the direction of communication.With the maturity of the third-generation semiconductor material preparation technology and the gradual emergence of light emitting diodes,photodetectors,photovoltaic cells and other optoelectronic devices,the preparation of optoelectronic devices using GaN materials for visible light communication has gradually entered people ’ s vision.GaN-based optoelectronic devices have the advantages of low energy consumption,high efficiency and low cost,and are now more and more widely used in communications,lighting,photovoltaic and other industries.In this paper,the working principles of GaN-based multi-quantum-well material optoelectronic devices as light-emitting devices,photodetectors and solar cells are studied,and their core advantages as the above three devices are analyzed.Subsequently,the fabrication process of optoelectronic devices based on GaN multi-quantum well materials was introduced in detail,and the performance of the device was further improved through the evaporation of Bragg reflector at the bottom of the device.Subsequently,they were characterized by scanning electron microscopy(SEM)and atomic force microscopy(AFM),and then their luminescence properties,detection properties and photovoltaic properties were tested and analyzed,mainly including volt-ampere characteristics,quantum efficiency,luminescence,detection spectrum and energy conversion efficiency.The overlapping area between the luminescence spectrum and the detection spectrum was studied,and the working characteristics of the energy array as a photovoltaic device were designed and studied.The experimental results show that the photoelectric device based on GaN multi-quantum well material has good photoelectric conversion and electro-optical conversion ability.At the same time,there is an overlap area of about 48 nm between the luminescence spectrum and the detection spectrum.Based on the optical and electrical properties of optoelectronic devices,this paper designs a visible light communication system with optoelectronic devices as the core.By using photoelectric devices as receivers to receive external signals,the communication rate of 1Mbps is realized.The energy array composed of photoelectric devices receives modulated light and drives the light emitting diode to light and emit.The communication rate of 50 Kbps is realized and the audio is successfully transmitted.The energy array received external illumination as the system energy supply,and two independent external modulated light were used to irradiate two photodetectors,respectively.The coupling signal drives the light emitting diode to light and emits the coupling signal,realizing the communication rate of 150 Kbps and successfully resolving the two signals.The experimental results show that the photoelectric device based on GaN multi-quantum well material has excellent visible light communication performance and photovoltaic performance,which provides a preliminary solution for realizing the integration of energy,communication and sensing in visible light communication,and effectively promotes the green development.