Study On Electrotoluminescence Of Silicon-based Terbium Ions

With the development of the times,the electrical interconnection has appeared signal crosstalk,inductance delay and other problems.Compared with electrical interconnection,optical interconnection has small energy loss,fast transmission speed and large band width range.Silicon-based optical modulators,silicon-based optical detectors,silicon-based optical waveguides and other optoelectronic devices in the silicon-based optical interconnection structure have been successfully developed,while efficient silicon-based light sources are still under development.Silicon-based light source needs to meet the characteristics of low working voltage and high luminous efficiency,while silicon is an indirect bandgap material with low luminous efficiency.The incorporation of rare earth ions into Si O₂ can meet the requirement of matching the lattice of silicon,but the solid solution of rare earth ions in Si O₂ is low,and can not meet the requirements of silicon-based light source.The rare earth-doped semiconductor Tb₂O₃ has high luminescence efficiency and low operating voltage.However,current silicon Tb₂O₃ electroluminescent devices have a high driving voltage due to difficult hole injection.In this paper,we try to add a hole injection layer and reduce the concentration quench of Tb³⁺in order to enhance the performance of the silicon-based Tb₂O₃ electroluminescent device.The main research contents of this paper are as follows:1.The Tb₂O₃ electroluminescence device was prepared on N-type heavy-doped Si substrate with magnetron sputtering,the structure of Tb₂O₃ film was studied with XRD.The I-V curves indicate that the device has good electroluminescence properties.Three Tb₂O₃ electroluminescence devices with Ni O layer,Cu Tb O₂ layer,Ni O Cu Tb O₂layer were prepared,and the electroluminescence properties were studied.2.Ce₂Si₂O₇:Ce³⁺and Ce₂Si₂O₇:Ce³⁺-Tb³⁺films were prepared on an N-type heavy-doping Si substrate by magnetron sputtering and annealing,and the structure and luminescence properties were studied by XRD and PL spectra on the influence of Tb₂O₃thickness and annealing temperature on the luminescence of Ce₂Si₂O₇:Ce³⁺-Tb³⁺films.The electroluminescence properties of Ce₂Si₂O₇:Ce³⁺-Tb³⁺and Ni O/Ce₂Si₂O₇:Ce³⁺-Tb³⁺were studied.3.The Cu Tb O₂/Ce₂Si₂O₇:Ce³⁺-Tb³⁺film was prepared on an N-type heavy-doped Si substrate by magnetron sputtering and annealing,the film morphology and structure were studied by SEM and XRD,and the luminescence and electrical properties were studied.