Design Of Logic Circuit And Reading/writing Circuit Based On Memristor

In recent years,computationally intensive applications such as artificial intelligence,video processing,and encryption have developed rapidly.On the other hand,the "storage wall" and "power consumption wall" issues of traditional storage and computing separation architectures limit the development of computing power.The integration of computing circuit and memory cell based on nonvolatile memristor has become one of the popular solutions to this problem.However,there are still some problems that prevent the circuit based on memristor from entering the practical application.Among them,the problems that need to be solved urgently are the status deviation of memristor caused by continuous reading in the read-write circuit,as well as the problems of logic information coverage and voltage attenuation in the logic circuit.This paper conducts research on read-write circuit and logic circuit based on memristor,compares and analyzes the advantages and disadvantages of three existing classical read-write circuits(non-volatile memristor read-write circuit,lossless read-write circuit based on memristor memory array,highly reliable read-write circuit based on memristor)and two logic circuits(containing logic and proportional logic),and achieves the following results:In the aspect of read-write circuit,a new parallel structure of memristor based on opposite polarity is proposed to solve the problem of resistance state deviation caused by continuous reading.This structure can effectively alleviate the problem of resistance state deviation caused by continuous reading.When the logic "0" is read continuously,the output voltage deviation of the improved circuit is reduced to 78mV,which is significantly less than the offset voltage of other circuits.In addition,When the logic "1" is read continuously,this circuit structure has a positive feedback effect on the information stored in the memristor.In terms of logic circuit,aiming at the problem of logic information coverage containing logic and the problem of voltage attenuation of proportional logic,AND OR and NOT equal gate circuit structure based on PMOS and memristor mixed logic is proposed.The designed gate circuit uses fewer electronic components to realize the AND OR and NOT equal logic function.The proposed circuit solves the problem of logic information coverage and eliminates the problem of voltage attenuation.In order to evaluate the performance of the above design scheme in practical application,four commonly used combinational circuits,namely encoder,decoder,data selector and multiplier,are designed using a hybrid logic gate circuit based on PMOS and memristor.The experimental results show that the number of devices used in each circuit has been significantly reduced,and the average power consumption has been reduced to 7.61mW,which is significantly lower than the average power consumption of traditional CMOS combinational circuits of 19.3 8mW.