In recent years,with the development of the integrated circuit industry,the performance of silicon materials seems to have been developed to the limit,and the research of new materials has attracted much attention.Among them,transition metal chalcogenides(TMDCs)are considered to be a promising new generation of semiconductor materials to replace silicon due to their monoatomic layer thickness,layered structure,adjustable band gap,and superior photoelectric properties.Among them,Mo S2,as a representative of TMDCs,has a rich content.In this paper,the plasma doping is controlled by a magnetic field to study molybdenum sulfide-based devices and CMOS logic cells.The main research contents are as follows:(1)Single-layer Mo S2is prepared by chemical vapor deposition(CVD),and the film size reaches 300μm.Nitrogen plasma doping is performed on the film prepared by the CVD method,and the p-type doping with high efficiency and low damage is realized by controlling the doping power,doping time and other parameters.(2)Using Silvaco TCAD for simulation calculation,the transfer curve and output curve of the molybdenum sulfide field effect transistor are obtained;the output curve is used to obtain the voltage transmission curve of the inverter.L-edit software was used to design the mask layout,and devices with different parameter structures were designed.(3)BJT,MOSFET,and CMOS inverters were fabricated and characterized.The amplification factor of the PNP bipolar transistor is 700;the threshold voltage of the doped p-type molybdenum sulfide field effect transistor is-2.58 V,the carrier mobility is136cm2V-1s-1,the current switching ratio is 106,and the subthreshold value is The swing is423m V·dec-1;the CMOS inverter realizes the inverting logic function.The voltage transfer curve is tested,and it can be concluded from the curve:when VDD=5 V,VM=2.49 V,the maximum voltage gain is 8.1,the high-level noise tolerance is 0.39VDD,the low-level noise tolerance is 0.40VDD,and the static Power consumption is 2.3 n W. |