Design And Key Technology Research Of High Voltage Gate Driver Chip

Along with the power system of power transformation,power drive,energy demand is higher and higher,such as design and achieve high performance,high reliability and low cost of Intelligent Power Module(IPM)has become the best solution,it effectively simplifies the design process of power system by reducing the system scale and total system cost.The design of High Voltage Gate Drive IC(HVIC)plays an important role in the stability and reliability of IPM.In recent years,HVIC has been widely used in many fields such as consumer electronics,information communication,industrial production and military aerospace.At the same time,various intelligent technological electronic products are brought forth from the old,which puts forward higher demands for high efficiency and intelligence of HVIC.Therefore,designing HVIC with low power consumption and high reliability has always been research hotspot for researchers.This article through to the principle of power device IGBT and introduces the driving circuit,design a kind of low power consumption,high reliability,high integration,and can realize in-phase output chip system architecture,including to satisfy the requirements of input and output phase of the same chip,this paper proposes a dead zone time produce circuit structure,the circuit is not only simple in structure,and can satisfy the chip delay and reliability design requirements.Based on 600 V 3μm BCD process,this paper focuses on the research of noise immunity of high voltage level shift circuit,chip bootstrap circuit,gate drive control circuit and other key technologies,so as to effectively improve the overall performance of HVIC.The design ideas are reflected in three aspects.First,based on the analysis of the working principle of the traditional high voltage level shift circuit,the shortcomings of the circuit are proposed,and the d V/dt noise and VS negative transient voltage noise immunity of the circuit are optimized.Second,in order to improve the switching performance of the traditional gate driver,a new active gate drive control circuit is used to reduce the voltage and current overshoot during IGBT switching.Thirdly,aiming at the problems of poor reliability,low integration and high cost of traditional bootstrap circuit,an integrated MOS bootstrap circuit is designed to realize the bootstrap scheme of replacing the bootstrap diode.On the basis of the first HVIC chip flow chip verification,in order to further improve the reliability of the integrated bootstrap circuit of the chip,a charge pump booster control MOS bootstrap circuit was proposed,which solved the problem that the original bootstrap circuit charge was less than 15 V.Chip simulation test results show that HVIC has good performance,which lays a good foundation for the later design of IPM.