| The overall trend of the rapid development of modern wireless communication technology is to achieve large capacity,high rate data transmission and high reliability transmission system.The broadband power amplifier is one of the key devices in the whole system.Different band wideband amplifiers have different applications.For example,p-band can be more easily obtained for high-power transmitters,while L-band can be used for satellite receiving systems.At present,power amplifiers are required not only to have high power,but also to cover a wider frequency band in order to meet a variety of application scenarios.To solve this problem,this paper based on gallium nitride technology,using impedance matching amplifier technology and distributed amplifier technology,designed two broadband amplifiers that can cover BOTH L and P bands.This paper on the gallium nitride main properties of high electron mobility transistor power amplifier design principle for the theoretical analysis,this paper introduces the principle,advantages and disadvantages of all kinds of distributed amplifier topology and circuit complexity,on the basis of impedance matching type amplifier,puts forward the three-level distributed optimized structure and improve the bandwidth and gain circuits,Based on the0.35μm gallium nitride high electron mobility transistor technology platform,two broadband amplifiers were developed and designed.Firstly,a 0.8-2ghz impedance matching amplifier is designed,covering L band and part of P band.Momentum electromagnetic algorithm is used to optimize the layout during the design process,and the area of the layout is reduced by 10.8%.The amplifier works in a wider frequency band,the amplifier is more stable,and the volume is small.Compared with the same type of amplifier,the volume is reduced by 19.6% and 31.9% respectively,and the drain efficiency is higher.In the whole working frequency band,the output power is more than39 d Bm,and the drain efficiency is more than 50%.In the 1.0-1.2ghz band,the efficiency is more than 80%,and the highest efficiency can reach 83.2%,which fully demonstrates the high efficiency characteristics of the wideband amplifier.At 1.2GHz,the drain voltage is 28 V and the gate voltage is-2.5V,the test condition is Pin= 20-31 dbm,and the test interval is 1d Bm.The measurement results show that the saturation output power of the power amplifier at1.2GHz is 40.8 d Bm,and the drain efficiency is 83.2%.The amplifier meets the design requirementsThen,a distributed amplifier with a frequency band of 0.1ghz-2.4ghz is designed,covering L band and P band.On the basis of impedance matching type amplifier introduced a distributed structure,but because of traditional distributed structure leads to the amplifier produces low efficiency,low power and low gain,so this article puts forward the three-level distributed optimized structure,using this structure can improve the power and efficiency,reduce loss,improve the stability of the amplifier and gain flatness.In consideration of the actual manufacturing process,to avoid the parasitic capacitance that may be produced by the microstrip line,MIM capacitor is used as a substitute for the microstrip line.In the whole working frequency band,the output power of the amplifier is more than 40 d Bm,and the drain efficiency is more than 38%,and the drain efficiency is more than 44% in the range of 0.1-1.5ghz.Under the condition of 1.4ghz,drain voltage 28 V and gate voltage-2.5V were selected.The test condition was Pin= 21-32 dbm,and the test was conducted at an interval of 1d Bm.The test results show that the saturation output power of the power amplifier is 43.9 d Bm at 1.4GHz,and the drain efficiency is 49%.The amplifier meets the design requirements... |
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