Research On Power Amplifier Chip Based On GaN HEMT And Terahertz T/R Module Components

At present,people have carried out a lot of research on millimeter wave with rich spectrum resources,and it has been widely used in radar,imaging,radio astronomy and other valuable fields.Millimeter wave integrated circuit plays a key role in promoting the development of millimeter wave system to integration and miniaturization,which has become a major research field in millimeter wave technology.As a key circuit for millimeter wave transmitting front-end,GaN power amplifier MMIC for Ka-band satellite communication is studied in this paper.Terahertz band,as a wide spectrum area,can provide rich spectrum resources for ultra-high speed communication,and is suitable for wireless communication and satellite communication in the future.Aiming at the core circuit of terahertz transceiver system,this paper completed the design of 220 GHz hairpin microstrip bandpass filter,and carried out the research on the key technology of Terahertz bare chip packaging integration based on the existing packaging technology.Firstly,Ka-band single-stage GaN power amplifier chip is studied.A Ka-band single-stage power amplifier is designed by using a 0.15μm GaN HEMT process.The gain is greater than 8d B,the maximum output power is 32.98 d B,the output power at 1d B compression point is 32.1d Bm,and the maximum power added efficiency is 43.4% in the operating frequency range of 29GHz-31 GHz.Then,the research on the 220 GHz hairpin microstrip bandpass filter was completed.At first,a traditional fifth-order hairpin microstrip bandpass filter is designed.After experimental test,its return loss is better than 15 d B in the range of 208GHz-233 GHz,and its insertion loss at the center frequency is 4.9d B.Then,in order to realize miniaturization,a bent hairpin microstrip bandpass filter is designed by bending the U-shaped resonator inward.The test results show that its return loss is better than 10 d B in the range of210GHz-240 GHz,and its insertion loss at the center frequency is 5.1d B.Finally,the research of 220 GHz transceiver front-end package integration is completed.Based on the gold wire bonding package and fan-out wafer-level package,the modular packaging of domestic terahertz multiplier chip,amplifier chip,transmitter chip and receiver chip are completed.The structure of interconnect transition circuit between chip and peripheral package substrate is studied and analyzed,and the transition performance is simulated and optimized.The front-end transceiver modules based on the gold wire bonding package technology are tested.The test results show that the maximum output power of the frequency doubler module can reach-8d Bm at 110 GHz,and the saturation output power of the amplifier module can reach 12.5d Bm at 110 GHz,the measured output power of the transmitting module can reach-8.42 d Bm at 220 GHz,the minimum measured frequency conversion loss of the receiving module is 13.97 d B at220 GHz.