Simulation Study Of Radiation Effects On Typical Semiconductor Devices

Semiconductor devices have rapidly emerged and developed at a high speed in the last century.With their applications and developments in the space environment,the effects of radiation on the electronic devices and peripheral circuits of space systems are gradually attracting attention.High-energy rays and particle streams can cause a certain degree of degradation and damage to device performance.This thesis presents the basic mechanism of the Total Ionizing Dose effect in space radiation effect and its impact on device performance.The three-dimensional model of typical semiconductor devices represented by NMOS and NPN Bipolar Transistors is established by Silvaco TCAD device simulation software,by introducing radiation parameters,the radiation response models of the devices are successfully established.The consistency between the radiation response model and the Total Ionizing Dose effect mechanism is verified based on the electrical parameter characterization of the radiation response model.Co-60 γ-Ray radiation experiments were commissioned from the Chinese Academy of Engineering Physics,and the data showed that the radiation response model established by the Silvaco TCAD software can accurately reflect the Total Ionizing Dose damage of typical semiconductor devices under radiation environment.In addition,based on the device characteristics of the radiation response model,this thesis establishes Spice circuit elements that can reflect Total Ionizing Dose effect,which can be readily invoked in the circuit simulation software,greatly reducing the cost of Total Ionizing Dose effect research and providing a new way for radiation effect research.