| With the rapid development of the era,green energy has become the theme of the era.As a key component in high-power power electronic devices,monolithic integrated intelligent power modules(IPM)are increasingly widely used and gradually replacing the traditional vertical structure of IPM.A monolithic integrated IPM module integrates shorted anode lateral insulated gate bipolar transistor(SA-LIGBT),drive circuits,and various detection and protection circuits on the same chip.Therefore,accurate modeling of SA-LIGBT devices will help designers to predict the relevant characteristics of circuits more accurately.Compared to non-shorted anode LIGBTs,SA-LIGBT introduces an additional N+region in the collector region of the device,which greatly changes the device characteristics.The channel formed by the collector N+ region can quickly extract unbalanced carrier charges from the drift region when the device is turned off,accelerating the device’s turn-off speed.In the previous works,there have been many papers about IGBT/LIGBT model.However,these models do not consider the shorted anode structure,and cannot accurately capture the relevant characteristics of SA-LIGBT devices.In order to accurately model the SA-LIGBT,the BSIM4.5 MOSFET model is used to model the MOS part of the SA-LIGBT;Then,the parasitic PNP transistor of SALIGBT is modeled using the G-P level 1 BJT standard SPICE model.According to the structure and characteristics of SA-LIGBT devices,a current controlled nonlinear resistance method is proposed to modeling the resistance of the shorted anode conduction path.In order to accurately simulate the dynamic characteristics of SA-LIGBT devices,accurate reproduction of device switching characteristics is achieved by modeling the carrier lifetime of carriers in the drift region during on/off state.Finally,a temperature characteristic model,a port capacitance model,and a self-heating effect model of the device are established.The model language is used to describe the established SA-LIGBT model,and then model parameters are extracted.In order to verify the accuracy of the model,the simulation data of the model were compared with the actual device test data and the traditional IGBT/LIGBT model.The validation results show that the proposed SA-LIGBT device simulation model can reduce the errors in the transition and linear regions of the output characteristic curves of the traditional non-shorted anode IGBT/LIGBT model at low collector bias.The maximum error between the transfer characteristic curves and output characteristic curves of the proposed model at room temperature and actual test data is less than 5%.The model can also achieve accurate reproduce the device port capacitance and transient switching characteristics.In addition,the proposed model can also reflect the self-heating effect of the device and the static characteristics of the device in the temperature range of-40℃to 150℃.Therefore,the SA-LIGBT device model proposed in this Thesis can meet the actual design simulation model requirements. |
