SiC GTO Drive Circuit Design And Verification

At present,the third-generation semiconductor based on SiC materials is developing rapidly.The good performance of SiC GTO makes it have great development potential and application prospects in the fields of energy saving and emission reduction,military defense and other fields.The SiC GTO drive circuit plays a vital role in device performance.According to the turn-on and turn-off requirements of SiC GTO,this paper designs a hardware circuit based on the drive circuit,control circuit and protection circuit,and the programming of the FPGA controller.After the test verification,the SiC GTO dynamic testing is carried out.The contents and conclusions of the study are as follows:1.Completed the gate drive circuit and auxiliary circuit design,simulation and programming of the control chip.The working principle of SiC GTO and the requirements of gate drive circuit are analyzed,and the simulation model of SiC GTO circuit is selected.The gate drive circuit,control circuit,protection acquisition circuit,power supply and communication circuit are designed,and each part of the circuit is simulated to verify the circuit function.Completed the software programming of the FPGA control chip,to realize the functions of host computer data transmission,gate drive control signal generation and transmission,data acquisition and dynamic storage,etc.2.Completed the design,manufacturing,installation and debugging of the gate drive circuit PCB board,as well as the construction and test verification of the high-voltage power supply of the main circuit and the experimental platform.Taking the SiC JBS diode as the test object,the driving circuit can achieve a minimum turn-on time of 50ns,a minimum turn-off time of 80ns,and a maximum steady-state current of 740mA,meeting the output requirements of SiC GTO gate trigger current-30mA and gate turn-off current 300mA.The diode voltage data collected by the high-speed AD circuit is basically consistent with the data collected by the oscilloscope,meeting the design requirements.3.The SiC GTO gate trigger turn-on and turn-off tests were carried out,the data sampling of the dynamic process was realized,and the feasibility of the driving circuit was verified.Tests show that when the anode-cathode voltage is 246V and the switching frequency is 50kHz,the turn-on and turn-off times of SiC GTO are about 6μs and 8βs,respectively,and the on-state voltage drop is about-3V.When the anode and cathode voltage is 300V and the switching frequency is 25kHz,the maximum gate turn-on current rise rate is 10A/μs,the anode current is 0.52A,the anode current rise rate is 0.068A/μ s,and the maximum gate turn-off current peak value is 1.25A,The gate turn-off current rise rate is up to 19A/μs.