Research And Design Of Monolithic IGBT Drivers

Under the background of the rapid optimization of the new energy industry structure,the application of electric energy in daily production and life is also getting higher and higher.Therefore,it is important to continuously develop power electronics technology and accelerate the research of high-power drive circuits.In this dissertation,a monolithic IGBT driver chip is studied and designed.The chip design is based on the HHG 0.35μm BCD process.Circuit design,simulation,and layout drawing through Cadence’s EDA tools.The driver chip designed in this dissertation includes a bandgap reference,high-voltage LDO,logic control,output drive,and a variety of protection circuits.The push-pull output stage has strong drive capability,and various protection features including undervoltage lockout,overcurrent and overtemperature protection increase the reliability and lifetime of the driver chip.When any consistent protection is triggered,the fault output of the chip immediately pulls down to indicate it.Among them,the over-temperature detection method is realized by two different designs,which provide options for over-temperature detection,and at the same time effectively improve the accuracy of over-temperature and ensure the effectiveness of the function.Considering the flexibility of the actual application of the chip,the driver chip designed in this dissertation can drive both a single IGBT and two independent IGBTs.At the same time,the driver chip designed in this dissertation is compatible with driving high-voltage MOS or P+N type half-bridge.The recommended operating voltage of the driver chip designed in this dissertation is 15 V,and the maximum voltage can be 20 V.The time from power-up to the drive output is 0.8ms.At the allowable operating voltage,a stable 5V low-voltage supply voltage can be output inside the chip.The chip drives the output with a source current of 2A and a sink current of 4A.The chip is protected at 12.5V undervoltage and turned on at 160°C.The drive output rise time is 48 ns,the fall time is 32 ns,and the dead time is 300 ns.The chip can be applied to high-power DC or AC motor drive control systems.