| As a new type of storage device that is expected to replace traditional storage devices in the future,memristor not only has the characteristics of memristor,but also has the advantages of simple structure,high storage density,fast speed,low power consumption,multi value storage and three-dimensional storage.With these advantages,memristor has good application prospects in the next generation of information storage,artificial neural network design,chaotic circuits and other fields.In this thesis,non-volatile rutile Ti O2 memristor with Au/Ti O2/FTO and W/Ti O2/FTO structures are designed.At the same time,based on the non-volatile electrical characteristics of rutile Ti O2 memristor,the device’s memristor model is further constructed by using Matlab software,and the chaotic circuit of the device’s memristor model is established,realizing the application design of image encryption.The specific work is as follows:1.The non-volatile rutile Ti O2 memristor with Au/Ti O2/FTO and W/Ti O2/FTO structures is designed.The experiment shows that the rutile Ti O2 memristor has a bipolar non-volatile resistive variable storage characteristic,and the resistive variable switching ratio of the device can be stably maintained at more than two orders of magnitude.The resistive variable storage behavior of the device conforms to the formation of oxygen vacancy conductive wires and the breaking of resistive variable storage mechanism.In addition,nitrogen annealing can not only reduce the set voltage of W/Ti O2/FTO rutile Ti O2 memristor,but also further increase the resistance to variable switching ratio of the device to more than three orders of magnitude,showing a good non-volatile resistance to variable storage characteristics of the device.2.Based on the rheostatic storage characteristics and rheostatic storage mechanism of Au/Ti O2/FTO rutile Ti O2 memristor,the theoretical model of nonlinear ion drift of the device is further constructed by using Matlab software.The experimental results showed that the established theoretical model of the device was completely consistent with the actual resistive storage characteristics of the device,indicating the reliability and accuracy of the device’s resistive memory model.3.A chaotic circuit system with a device memristor model was established,and images were encrypted and applied based on the chaotic sequence generated by the chaotic system.The dynamic characteristics of chaotic circuit system are analyzed by chaotic attractor,Lyapunov exponent and bifurcation diagram.The feasibility of image encryption applications was further studied using histograms,adjacent pixel correlation analysis,and key sensitivity analysis.At present,it is not common to apply the memristor model of actual physical devices to the research of chaotic systems.At the same time,this thesis improves Zigzag scrambling algorithm,further improves the accuracy and reliability of the encryption system,and enhances the anti-attack capability of the system.The research results provide an experimental basis for the application of non-volatile rutile Ti O2 memristor. |
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