Effect Of High Energy Particle Irradiation On The Structure And Optical Properties Of Santimonide Superlattice

Antimonide superlattices have become the preferred material for the third-generation infrared detectors due to their unique energy band structure,higher operating temperature,and better detection performance.However,its application in space will inevitably be irradiated by high-energy particles in space,which will affect its working state,and even lead to device failure in serious cases.In order to study the effect of high-energy particle irradiation on antimonide superlattices during space operation,high-energy electron irradiation treatment was carried out on InAs/InAsSb type-Ⅱ superlattices and InAs/InGaAsSb type-Ⅱ superlattices.The structure and optical properties of the superlattice materials before and after irradiation treatment are compared.The main results are as follows:InAs/InAsSb type-Ⅱ superlattice materials were treated with high-energy electron irradiation,and the structure and optical properties of InAs/InAsSb type-Ⅱ superlattices before and after irradiation were compared.The results show that the surface roughness of InAs/InAsSb type-Ⅱ superlattices treated with high-energy electron irradiation increased by an order of magnitude,and the root mean square roughness increased from 0.154 nm to5.15 nm.The lattice mismatch and periodic thickness inside the material also fluctuated.This is due to the shift effect of high-energy electron irradiation,which leads to fluctuations in the internal components of the superlattice,which affect the surface morphology,lattice mismatch and local periodic thickness of the superlattice.The power-dependent photoluminescence spectrum fitting parameter β increases from 0.97 to a maximum of 1.2at 75 K.The increase of the fitting parameter β indicates that the proportion of Auger recombination decreases and the proportion of Shockley-Read-Hall recombination increases during the recombination process of InAs/InAsSb type-Ⅱ superlattices treated with high-energy electron irradiation.The fitting results of temperature-dependent photoluminescence spectra showed that the activation energy required for non-radiative recombination of the samples after high-energy electron irradiation increased from 28 me V to 37 me V,and the proportion of non-uniform broadening to half-peak width broadening increased.InAs/InGaAsSb type-Ⅱ superlattices were treated with high-energy electron irradiation,and the structure and optical properties of InAs/InGaAsSb type-Ⅱ superlattices before and after high-energy electron irradiation were compared.The root mean square roughness of InAs/InGaAsSb type-Ⅱ superlattices treated with high-energy electron irradiation increased from 0.182 nm to a maximum of 0.262 nm.The increase in lattice mismatch existing inside the material increased from 668.98 ppm to a maximum of 851.15 ppm,and the period thickness increased from 7.149 nm to a maximum of 7.169 nm.The power-dependent photoluminescence spectrum fitting parameter β decreases from 0.96 to a minimum of 0.77 at 75 K.The decrease in fitting parameter β indicates that the proportion of Auger recombination increases and the proportion of Shockley-Read-Hall recombination decreases during the recombination of InAs/InGaAsSb type-Ⅱ superlattices treated with high-energy electron irradiation.The temperature-dependent photoluminescence spectra show that the activation energy required for non-radiative recombination of samples treated with high-energy electron irradiation increases from 15.9 me V to 26.7 me V.To compare the effects of high-energy electron irradiation on the production of ternary InAs/InAsSb and quaternary InAs/InGaAsSb type-Ⅱ superlattice materials.After high-energy electron irradiation treatment,the surface roughness of InAs/InAsSb type-Ⅱsuperlattice structures increased by up to 32 times,lattice mismatch increased by up to 97%,and the full width at half maximum of-1 order diffraction peaks increased by up to 1.28 times.The surface roughness of InAs/InGaAsSb type-Ⅱ superlattices increased by up to44%,lattice mismatch increased by up to 27%,and the half-peak width of-1-order diffraction peaks increased by up to 1.29 times.By comparing the crystal quality of ternary InAs/InAsSb and quaternary InAs/InGaAsSb type-Ⅱ superlattices before and after irradiation treatment,it can be seen that high-energy electron irradiation has a great effect on the structure of ternary InAs/InAsSb type-Ⅱ superlattices.After high-energy electron irradiation treatment,the activation energy required for non-radiative recombination of InAs/InAsSb type-Ⅱ superlattices and InAs/InGaAsSb type-Ⅱ superlattices increased by up to 32%,while InAs/InGaAsSb type-Ⅱ superlattices increased by up to 68%.By comparing the luminescence properties of ternary InAs/InAsSb and quaternary InAs/InGaAsSb type-Ⅱ superlattices before and after irradiation treatment,it can be seen that high-energy electron irradiation has a greater impact on the luminescence properties of quaternary InAs/InGaAsSb type-Ⅱ superlattices.To sum up,this paper studies the effect of high-energy electron irradiation treatment on the structure and optical properties of InAs/InAsSb type-Ⅱ superlattices and InAs/InGaAsSb type-Ⅱ superlattices,and compares InAs/InAsSb type-Ⅱ superlattices and InAs/InGaAsSb type-Ⅱ superlattices.The irradiation resistance properties of InAs/InGaAsSb type-Ⅱ superlattices.In order to explore the method of enhancing the irradiation resistance of antimonide type-Ⅱ superlattice materials and improve the irradiation reliability of antimonide type-Ⅱ superlattice materials,it is of great significance for the normal and effective operation of semiconductor optoelectronic devices in space.