| Photodetector is a device used to detect light,which is realized by converting optical signals into electrical signals.According to working wavelengths,it can be classified into infrared detections,ultraviolet detection sand visible light detections,which has shown a broad application prospect in missile early warning,space detection,environment monitoring,fluorescence spectroscopy,life science and many other fields.Zinc oxide（ZnO）is an inorganic compound of a wide band gap semiconductor material,with a band gap width of about 3.37 e V.It can absorb higher energy photons,and has high thermal stability,high electron mobility,high carrier concentration,etc.,making it one of the important materials for the preparation of semiconductor optoelectronic devices.Structures such as nanowires,nanorods,and two-dimensional nanofilms in the morphology of zinc oxide materials have attracted widespread attention in electronic and optoelectronic devices due to their superior electrical,optical,and mechanical properties.In this work,it mainly introduces the characteristics of ZnO nanomaterials,discusses the research progress of photodetectors made of ZnO nanomaterials,analyzes the types and structures of the various photodetector developed to date,and focuses on the preparation methods of nanoclusters array structure devices and multi-layer composite structure devices,and studies their ultraviolet photodetection performance through characterization analysis and test analysis.The purpose of this study is to prepare ZnO-based photodetectors to explore the performance of the ultraviolet detection,the main research contents completed are as follows:From the perspective of optimize the structure of the optical functional layer,using hydrothermal growth method,lithography,and ICP etching process,the photodetector is prepared by combining semiconductor material with semiconductor device preparation technology.Such as growth in different substrate surface preparation of the ZnO nanoclusters array,the nanoclusters array structure could be combined with the heterostructure layer to change the structure of the traditional nano-detectors.Si/ZnO nanoclusters array and Ga N/ZnO nanoclusters array structure ultraviolet photodetectors have been prepared.Due to the effect of the built-in electric field,the holes and electrons are separated,thereby reducing the recombination rate between them,resulting in an increase in the density of free carriers.Therefore,the ZnO nanoclusters array UV photodetectors were responsive to ultraviolet light without applied voltage,realizing a miniaturized,low-power self-powered detector.For the reason that improve the light absorption efficiency of the detector,combined with the hydrothermal growth method and sol-gel method,the multi-layer structure of ZnO nanowires photodetectors was prepared,the composite structure consisted of Si O2,ZnO film;The UV light was localized in the ZnO array,improve the responsivity and improve the device performance.Meanwhile,the multi-layer structure can effectively improve the light absorption of the ZnO nanowires,which is beneficial to the light loss is reduced.At the same time,by adjusting the path length of light,the absorption efficiency is expaned,the responsivity of the detector is improved;The fabrication process of the ZnO nanowires photodetectors is simple,and it can achieve rapid photoelectric conversion in ultraviolet region,and it provides a feasible method for photodetectors with high-speed response,short cycle,and low cost. |
